Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates Auteur(s): Corfdir Pierre, Dussaigne Amelie, Teisseyre Henryk, Suski Tadeusz, Grzegory Izabella, Lefebvre P., Giraud Etienne, Shahmohammadi Mehran, Phillips Richard T., Ganiere Jean-Daniel, Grandjean Nicolas, Deveaud Benoit
Conference: International Workshop on Nitride semiconductors. (Sapporo, JP, 2012-10-14) Ref HAL: hal-01179181_v1 DOI: 10.7567/JJAP.52.08JC01 WoS: 000323883100041 Exporter : BibTex | endNote 8 Citations Résumé: This article presents the dynamics of excitons in a-plane (Al,Ga)N/GaN single quantum wells of various thicknesses grown on bulk GaN substrates. For all quantum well samples, recombination is observed to be predominantly radiative in the low-temperature range. At higher temperatures, the escape of charge carriers from the quantum well to the (Al,Ga)N barriers is accompanied by a reduction in internal quantum efficiency. Based on the temperature-dependence of time-resolved photoluminescence experiments, we also show how the local disorder affects the exciton radiative lifetime at low temperature and the exciton non-radiative lifetime at high temperature. |