VIS-UV ZnCdO/ZnO multiple quantum well nanowires and the quantification of Cd diffusion. Auteur(s): Lopez-Ponce Manuel, Nakamura A., Suzuki M., Temmyo J., Agouram S., Martinez-Tomas Mc, Munoz-Sanjose V., Lefebvre P., Ulloa J.-M., Munoz E., Hierro A. (Article) Publié: Nanotechnology, vol. 25 p.255202 (2014) Ref HAL: hal-01009919_v1 PMID 24897432 DOI: 10.1088/0957-4484/25/25/255202 WoS: 000337501200004 Exporter : BibTex | endNote 8 Citations Résumé: We report on the growth and microstructure analysis of high Cd content ZnCdO/ZnO multiple quantum wells (MQW) within a nanowire. Heterostructures consisting of ten wells with widths from 0.7 to 10nm are demonstrated, and show photoluminescence emissions ranging from 3.03 to 1.97eV. The wells with thicknesses⩽2nm have high radiative efficiencies compared to the thickest ones, consistent with the presence of quantum confinement. However, a nanometric analysis of the Cd profile along the heterostructures shows the presence of Cd diffusion from the ZnCdO well to the ZnO barrier. This phenomenon modifies the band structure and the optical properties of the heterostructure, and is considered in order to correctly identify quantum effects in the ZnCdO/ZnO MQWs. |