Ge incorporation inside 4H-SiC during Homoepitaxial growth by chemical vapor deposition. Auteur(s): Alassaad Kassem, Soulière Véronique, Cauwet François, Peyre H., Carole Davy, Kwasnicki P., Juillaguet S., Kups Thomas, Pezoldt Jörg, Ferro Gabriel (Article) Publié: Acta Materialia, vol. 75 p.219-226 (2014) Texte intégral en Openaccess : Ref HAL: hal-01023271_v1 Ref Arxiv: 1407.3222 DOI: 10.1016/j.actamat.2014.04.057 WoS: 000340854200019 Ref. & Cit.: NASA ADS Exporter : BibTex | endNote 9 Citations Résumé: In this work, we report on the addition of GeH4 gas during homoepitaxial growth of 4H-SiC by chemical vapour deposition. Ge introduction does not affect dramatically the surface morphology and defect density though it is accompanied with Ge droplets accumulation at the surface. The Ge incorporation level inside the 4H-SiC matrix, ranging from few 1017 to few 1018 at.cm-3, was found to be mainly affected by the growth temperature and GeH4 flux. Other growth parameters like C/Si ratio, polarity, or off-orientation did not show any significant influence. On the other hand, adding GeH4 led to the increase of the intentional n type doping level by a factor of 2 to 5 depending on the C/Si ratio in the gas phase. Commentaires: 8 pages |