Near-infrared gallium nitride two-dimensional photonic crystal platform on silicon Auteur(s): Roland Iännis, Zeng Y., Han Z., Checoury X., Blin C., El Kurdi M., Ghrib A, Sauvage Stéphane, Gayral B., Brimont C., Guillet T., Semond F., Boucaud Philippe (Article) Publié: Applied Physics Letters, vol. 105 p.011104 (2014) Texte intégral en Openaccess : Ref HAL: hal-01130613_v1 DOI: 10.1063/1.4887065 WoS: 000339664900004 Exporter : BibTex | endNote 32 Citations Résumé: We demonstrate a two-dimensional free-standing gallium nitride photonic crystal platform operating around 1550 nm and fabricated on a silicon substrate. Width-modulated waveguide cavities are integrated and exhibit loaded quality factors up to 34 000 at 1575 nm. We show the resonance tunability by varying the ratio of air hole radius to periodicity, and cavity hole displacement. We deduce a 7.9 dB/cm linear absorption loss for the suspended nitride structure from the power dependence of the cavity in-plane transmission. |