Transport of Indirect Excitons in Polar GaN/AlGaN Quantum Wells. Auteur(s): Fedichkin F., Andreakou P., Valvin P., Vladimirova M., Guillet T., Bretagnon T., Dussaigne A, Grandjean N, Lefebvre P. (Affiches/Poster) Compound Semiconductor Week 2014 (Montpellier, FR), 2014-05-11Texte intégral en Openaccess : Ref HAL: hal-01305161_v1 Exporter : BibTex | endNote Résumé: We present spatially- and time-resolved photoluminescence experiments on polar GaN/AlGaN quantum well structures,showing exciton propagation distance of tens of micrometers from generation position and exciton radiative lifetimes oftens of microseconds. We study in detail the dynamics and range of their relaxation/diffusion along the growth plane, asa function of temperature. |