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- Optical investigation of 3C-SiC hetero-epitaxial layers grown by sublimation epitaxy under gas atmosphere doi link

Auteur(s): Kwasnicki P., Jokubavicius V., Sun J. W., Peyre H., Yakimova R., Syvajarvi M., Camassel J., Juillaguet S.

Conference: SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2 (Miyasaki, JP, 2014)
Actes de conférence: Materials Science Forum, vol. 778-780 p.243-+ (2014)


Ref HAL: hal-01936275_v1
DOI: 10.4028/www.scientific.net/MSF.778-780.243
WoS: WOS:000336634100057
Exporter : BibTex | endNote
Résumé:

Optical investigation of 3C-SiC hetero-epitaxial layers grown by sublimation epitaxy under gas atmosphere