Optical investigation of 3C-SiC hetero-epitaxial layers grown by sublimation epitaxy under gas atmosphere Auteur(s): Kwasnicki P., Jokubavicius V., Sun J. W., Peyre H., Yakimova R., Syvajarvi M., Camassel J., Juillaguet S.
Conference: SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2 (Miyasaki, JP, 2014) Ref HAL: hal-01936275_v1 DOI: 10.4028/www.scientific.net/MSF.778-780.243 WoS: WOS:000336634100057 Exporter : BibTex | endNote Résumé: Optical investigation of 3C-SiC hetero-epitaxial layers grown by sublimation epitaxy under gas atmosphere |