Improvement of the Specific Contact Resistance on P-Type 4H-SiC by Using a Highly P-Typed Doped 4H-SiC Layer Selectively Grown by VLS Transport Auteur(s): Thierry-Jebali Nicolas, Vo-Ha Arthur, Carole Davy, Lazar Mihai, Ferro Gabriel, Peyre H., Contreras S., Brosselard Pierre
Conference: HeteroSiC-WASMPE (Nice, FR, 2013-06-17) |