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- Improvement of the Specific Contact Resistance on P-Type 4H-SiC by Using a Highly P-Typed Doped 4H-SiC Layer Selectively Grown by VLS Transport doi link

Auteur(s): Thierry-Jebali Nicolas, Vo-Ha Arthur, Carole Davy, Lazar Mihai, Ferro Gabriel, Peyre H., Contreras S., Brosselard Pierre

Conference: HeteroSiC-WASMPE (Nice, FR, 2013-06-17)
Actes de conférence: Materials Science Forum, vol. 806 p.57 - 60 (2015)