Ref HAL: hal-01596715_v1
DOI: 10.1016/j.apsusc.2017.07.130
WoS: 000413658200033
Exporter : BibTex | endNote
13 Citations
Résumé:

$Cu_{2}O{\backslash}ZnO$ nanowires (NWs) heterojunctions were successfully prepared by combining Atomic layer Deposition (ALD) and Electrochemical Deposition (ECD) processes. The crystallinity, morphology and photoconductivity properties of the$Cu_{2}O{\backslash}ZnO$ nanostructures have been investigated. The properties of the $Cu_{2}O$ absorber layer and the nanostructured heterojunction were studied in order to understand the mechanisms lying behind the low photoconductivity measured. It has been found that the interface state defects and the high resistivity of $Cu_{2}O$ film were limiting the photovoltaic properties of the prepared devices. The understanding presented in this work is expected to enable the optimization of solar cell devices based on $Cu_{2}O{\backslash}ZnO$ nanomaterials and improve their overall performance.