Auteur(s): Tsagaraki K., Nafouti Maher, Peyre H., Vamvoukakis K, Makris N, Kayambaki M, Stavrinidis A, Konstantinidis G, Panagopoulou M, Alquier D., Zekentes Konstantinos
Conference: International Conference on Silicon Carbide and Related Materials (ICSCRM 2017) (Washington, DC, US, 2017-09-17)
Texte intégral en Openaccess : 
Ref HAL: hal-01698971_v1
DOI: 10.4028/www.scientific.net/MSF.924.653
Exporter : BibTex | endNote
Résumé:
Different methods for cross-section doping topography of SiC Trenched-singly-implanted vertical junction field effect transistors (TSI-VJFETs) are presented with the purpose to determine the doping distribution in the epitaxial structure and the implanted areas.