|Cross-section doping topography of 4H-SiC VJFETs by various techniques |
Auteur(s): Tsagaraki K., Nafouti M, Peyre H., Vamvoukakis K, Makris N, Kayambaki M, Stavrinidis A, Konstantinidis G, Panagopoulou M, Alquier D., Zekentes Konstantinos
Ref HAL: hal-01698971_v1
Exporter : BibTex | endNote
Different methods for cross-section doping topography of SiC Trenched-singly-implanted vertical junction field effect transistors (TSI-VJFETs) are presented with the purpose to determine the doping distribution in the epitaxial structure and the implanted areas.