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- Cross-section doping topography of 4H-SiC VJFETs by various techniques hal link

Auteur(s): Tsagaraki K., Nafouti M, Peyre H., Vamvoukakis K, Makris N, Kayambaki M, Stavrinidis A, Konstantinidis G, Panagopoulou M, Alquier D., Zekentes Konstantinos

Conference: International Conference on Silicon Carbide and Related Materials (ICSCRM 2017) (Washington, DC, US, 2017-09-17)

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Résumé:

Different methods for cross-section doping topography of SiC Trenched-singly-implanted vertical junction field effect transistors (TSI-VJFETs) are presented with the purpose to determine the doping distribution in the epitaxial structure and the implanted areas.