Terahertz photoconductivity of double acceptors in narrow gap HgCdTe epitaxial films grown by molecular beam epitaxy on GaAs(013) and Si(013) substrates Auteur(s): Rumyantsev V. V., Kozlov D. v., Morozov S. V., Fadeev M. a., Kadykov A., Teppe F., Varavin V. s., Yakushev M. v., Mikhailov N. N., Dvoretskii S. A., Gavrilenko V. I. (Article) Publié: Semiconductor Science And Technology, vol. 32 p.095007 (2017) Ref HAL: hal-01830522_v1 DOI: 10.1088/1361-6641/aa76a0 WoS: WOS:000407861500001 Exporter : BibTex | endNote 14 Citations |