Comparative study of p-type 4H-SiC grown on n-type and semi insulating 4H-SiC substrates Auteur(s): Contreras S., Konczewicz L., Arvinte Roxana, Peyre H., Chassagne Thierry, Zielinski Marcin, Juillaguet S.
Conference: 11th European Conference on Silicon Carbide and Related Materials (Thessaloniki, GR, 2016-09) Ref HAL: hal-01935564_v1 Exporter : BibTex | endNote Résumé: Comparative study of p-type 4H-SiC grown on n-type and semi insulating 4H-SiC substrates |