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- Comparative study of p-type 4H-SiC grown on n-type and semi insulating 4H-SiC substrates hal link

Auteur(s): Contreras S., Konczewicz L., Arvinte Roxana, Peyre H., Chassagne Thierry, Zielinski Marcin, Juillaguet S.(Corresp.)

Conference: 11th European Conference on Silicon Carbide and Related Materials (Thessaloniki, GR, 2016-09)
Actes de conférence: Material Sciences Forum, vol. 897 p.275 (2017)


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Résumé:

Comparative study of p-type 4H-SiC grown on n-type and semi insulating 4H-SiC substrates