Auteur(s): Contreras S., Konczewicz L., Peyre H., Juillaguet S., Weyher J.l., Dziecielewski I, Al khalfioui Mohamed, Matta S., Leroux Mathieu, Damilano Benjamin, Brault Julien, Gil B.
(Affiches/Poster) International Workshop on Ultraviolet Materials and Devices (FUKUOKA, JP), 2017-11-14
Résumé:
High temperature electrical transport study of n-type Si-doped AlN