Temperature-dependent terahertz spectroscopy of inverted-band three-layer InAs/GaSb/InAs quantum well Auteur(s): Krishtopenko S., Ruffenach S., Gonzalez-Posada F., Boissier G., Marcinkiewicz M., Fadeev M. A., Kadykov A., Rumyantsev V. V., Morozov S. V., Gavrilenko V. I., Consejo C., Desrat W., Jouault B., Knap W., Tournié Eric, Teppe F. (Article) Publié: Physical Review B, vol. 97 p.245419 (2018) Texte intégral en Openaccess : Ref HAL: hal-01862289_v1 DOI: 10.1103/PhysRevB.97.245419 WoS: WOS:000436036700007 Exporter : BibTex | endNote 10 Citations Résumé: We report on temperature-dependent terahertz spectroscopy of a three-layer InAs/GaSb/InAs quantum well (QW) with inverted-band structure. The interband optical transitions, measured up to 16 T at different temperatures by Landau-level magnetospectroscopy, demonstrate the inverted-band structure of the QW. The terahertz photoluminescence at different temperatures allows us to directly extract the optical gap in the vicinity of the Γ point of the Brillouin zone. Our results experimentally demonstrate that the gap in the three-layer QWs is temperature independent and exceeds by four times the maximum band gap available in the inverted InAs/GaSb bilayers. |