Ref HAL: hal-01975671_v1
Exporter : BibTex | endNote
Résumé:

Raman spectroscopy (RS) of graphene-related materials (GRM) is being considered as a fast, versatile, powerful and non-destructive characterization technique. RS is sensitive to the number of layers, their stacking order, the nature and density of defects, the charge carrier density and in-plane strain variations. However, the positions, linewidths, profiles, intensities of the graphene/multilayer graphene (MLG) Raman bands are not only affected by all these perturbations but also depend on the uniformity across the probed area and on the substrate (through optical interference effects, dielectric screening…). An accurate interpretation of Raman spectra becomes then extremely complex and deserves the combined use of complementary diagnosis. We recently developed a RS set-up allowing to monitor simultaneously the laser power, transmission, reflection and Raman signal.In this contribution, we discuss the application of this tool for counting the number of layers of different kind of graphene/MLG samples with the aim to define standard procedures for GRM characterization on different substrates.