Radiation from shallow oxygen impurity in AlGaN/GaN HEMT structures in magnetic field Auteur(s): Grigelionis I., Diakonova N., Knap W., Teppe F., Prystawko P., Kasalynas I. (Article) Publié: Solid State Communications, vol. 320 p.114019 (2020) Ref HAL: hal-02986295_v1 DOI: 10.1016/j.ssc.2020.114019 WoS: WOS:000576648100003 Exporter : BibTex | endNote Résumé: The electrically excited impurity emission from AlGaN/GaN high electron mobility transistor (HEMT) structures in external magnetic field varying from 1.2 T to 1.5 T was investigated in this work at temperature of 4.2 K. We have observed the sharp emission line at (263 ± 1) cm−1 with FWHM of (5.8 ± 0.8) cm−1, which we have attributed to radiative electronic transitions in residual oxygen impurity atoms. The blueshift of resonant transition frequency due to presence of external magnetic field was observed. The width of the peak was found to be defined mainly by the thermal broadening at 4.2 K. |