--------------------
- Stimulated Emission up to 2.75 mu m from HgCdTe/CdHgTe QW Structure at Room Temperature doi link

Auteur(s): Utochkin Vladimir V., Kudryavtsev Konstantin E., Dubinov Alexander A., Fadeev Mikhail A., Rumyantsev Vladimir V., Razova Anna A., Andronov Egor, Aleshkin Vladimir Ya, Gavrilenko Vladimir, Mikhailov Nikolay N., Dvoretsky Sergey A., Teppe F., Morozov Sergey

(Article) Publié: Journal Of Nanomaterials, vol. 12 p.2599 (2022)
Texte intégral en Openaccess : openaccess


Ref HAL: hal-03824761_v1
DOI: 10.3390/nano12152599
WoS: WOS:000839798300001
Exporter : BibTex | endNote
Résumé:

Heterostructures with thin Hg(Cd)Te/CdHgTe quantum wells (QWs) are attractive for the development of mid-infrared interband lasers. Of particular interest are room-temperature operating emitters for the short-wavelength infrared range (SWIR, typically defined as 1.7-3 μm). In this work, we report on the observation of stimulated emission (SE) in the 2.65-2.75 µm wavelength range at room temperature in an optically pumped HgCdTe QW laser heterostructure. We study a series of three samples with lengths ranging from 2.5 to 7 mm and discuss the effects related to the non-uniformity of the excitation beam profile. SE threshold intensity and the magnitude of pump-induced carrier heating are found to be effectively dependent on the chip size, which should be accounted for in possible designs of HgCdTe-based optical converters. We also pay attention to the problem of active medium engineering in order to push the SE wavelength towards the 3-5 µm atmospheric window and to lower the SE threshold.