Sommaire:

In this talk we show strong SOI in graphene induced by monolayer WS2. Direct comparison between graphene/monolayer WS2 and graphene/bulk WS2 system in magnetotransport measurements reveals that monolayer transition metal dichalcogenide (TMD) can induce much stronger SOI than bulk. Detailed theoretical analysis of the weak-antilocalization curves gives an estimated spin-orbit energy (Eso) more than 10 meV. We find that z → − z symmetric SOI is stronger than asymmetric one, indicating that strong Kane-Mele (KM) or valley-Zeeman (VZ) type SOI is induced in graphene. Dominant Elliot-Yafet spin relaxation mechanism and dramatic increase of resistance around the Dirac point with temperature are suggestive for existence of larger KM SOI than VZ one.

Pour plus d'informations, merci de contacter Jacques V.