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(313) Production(s) de KNAP W.
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A 280-GHz Schottky Diode Detector in 130-nm Digital CMOS  Auteur(s): Han Ruonan, Zhang Yaming, Coquillat D., Videlier H., Knap W., Brown Elliott, Kenneth K. O. (Article) Publié: Ieee Journal Of Solid-State Circuits, vol. 46 p.2602-2612 (2011) |
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Generation and Detection of Terahertz Radiation by Field Effect Transistors Auteur(s): Knap W.
Conférence invité: PIERS 2011 Progress In Electromagnetics Research Symposium (, MA, 2011-03-20) |
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Silicon Field Effect Transistors for Terahertz Detection and Imaging Auteur(s): Knap W.
Conférence invité: European Conference on Antennas and Propagation (, IT, 2011-04-11) |
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Terahertz Detection and Emission by Field effect Transistors Auteur(s): Knap W.
Conférence invité: 3rd International Workshop on THz Radiation : Basic Research &Applications (, UA, 2011-09-04) |
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Nanotransistors for Terahertz Detection and Imaging. Auteur(s): Knap W.
Conférence invité: The 8th Spanish Conference on Electron Devices (CDE 2011) (, ES, 2011-02-08) |
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Terahertz Detection and Emission by Field Effect Transistors Auteur(s): Knap W.
Conférence invité: 10th Russian Conference on Physics of Semiconductors (, RU, 2011-09-19) |
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Teraherz Emitters based on GaN Field Effect Transistors Auteur(s): Knap W.
Conférence invité: International School and Conference on the Physics of Semiconductors (, PL, 2011-06-27) |
