Ref HAL: hal-01393714_v1
DOI: 10.1103/PhysRevB.94.081201
WoS: WOS:000381889700002
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10 Citations
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We show that the spin-lattice relaxation in n-type insulating GaAs is dramatically accelerated at low magnetic fields. The origin of this effect, which cannot be explained in terms of well-known diffusion-limited hyperfine relaxation, is found in the quadrupole relaxation, induced by fluctuating donor charges. Therefore, quadrupole relaxation, which governs low field nuclear spin relaxation in semiconductor quantum dots, but was so far supposed to be harmless to bulk nuclei spins in the absence of optical pumping, can be studied and harnessed in the much simpler model environment of n-GaAs bulk crystal.

Ref HAL: hal-01353893_v2
DOI: 10.1103/PhysRevApplied.6.014011
WoS: WOS:000380125900001
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15 Citations
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We report on the exciton propagation in polar ðAl; GaÞN=GaN quantum wells over several micrometers and up to room temperature. The key ingredient to achieve this result is the crystalline quality of GaN quantum wells grown on GaN substrate that limits nonradiative recombination. From the comparison of the spatial and temporal dynamics of photoluminescence, we conclude that the propagation of excitons under continuous-wave excitation is assisted by efficient screening of the in-plane disorder. Modeling within drift-diffusion formalism corroborates this conclusion and suggests that exciton propagation is still limited by the exciton scattering on defects rather than by exciton-exciton scattering so that improving interface quality can boost exciton transport further. Our results pave the way towards room-temperature excitonic devices based on gate-controlled exciton transport in wide-band-gap polar heterostructures.

DOI: 10.1103/PhysRevB.93.115410
WoS: WOS:000371734300008
4 Citations
Résumé:

We report on the unusual and counterintuitive behavior of spin lifetime of excitons in coupled semiconductor quantum wells (CQWs) in the presence of in-plane magnetic field. Instead of conventional acceleration of spin relaxation due to the Larmor precession of electron and hole spins, we observe a strong increase of the spin relaxation time at low magnetic fields followed by saturation and decrease at higher fields. We argue that this nonmonotonic spin relaxation dynamics is a fingerprint of the magnetic quantum confined Stark effect. In the presence of electric field along the CQW growth axis, an applied magnetic field efficiently suppresses the exciton spin coherence, due to inhomogeneous broadening of the g-factor distribution.

Ref HAL: hal-01389731_v1
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Commentaires: Ecole Internationale. Cours présenté par Masha Vladimirova.

Ref HAL: hal-01305122_v1
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An indirect exciton (IX) is a quasiparticle consisting of an electron and a hole spatially separated in two different planes of a quantum nanostructure, thus exhibiting a strongly dipolar character. Current research on transport properties of IXs is opening a pathway to the development of novel optoelectronic devices, which have already been demonstrated in GaAs-based heterostructures [1-3]. Applying the same ideas to IXs in wide-band gap polar quantum wells (QWs) is particularly promising because of much larger exciton binding energies and natural dipoles induced by strong built-in electric fields. We have recently studied the transport of IXs in GaN/AlGaN QWs grown on sapphire substrates, at temperatures up to 80 K [4], by mapping the micro-photoluminescence (µ-PL) signal obtained under intense, point excitation. The low-temperature PL recorded at long distances from the excitation spot (30 < r < 100µm) turned out to be a secondary PL, excited by the light emitted at the central spot, guided along the plane, due to the refractive index contrast between the layer and the substrate. At higher temperatures, this signal is rapidly quenched and the distance reached by the measurable PL is limited by recombination of excitons at non-radiative defects. Using GaN substrates instead of sapphire should both suppress the secondary emission and the nonradiative recombination, by reducing dislocation densities by 3-4 orders of magnitude. In this work, we compare exciton propagations in two GaN/Al0.19Ga0.81N QWs of identical structures, except for the substrates, respectively of GaN and sapphire. For the GaN substrate, we indeed observe the mere propagation of excitons up to 35 µm away from the excitation spot and up to 250 K (see below). We propose a drift/diffusion modelling of exciton transport, accounting for dipole-dipole repulsion in high-density regions and for disorder along the sample plane.[1]Y. Y. Kuznetsova, M. Remeika, A. A. High, A. T. Hammack, L. V. Butov, M. Hanson, and A. C. Gossard. Optics Letters 35 (10), 1587 (2010).[2]A.A. High, E.E. Novitskaya, L.V. Butov, and A.C. Gossard. Science 321, 229 (2008).[3]A.A. High, A.T. Hammack, L.V. Butov, and A.C. Gossard. Optics Letters 32, 2466 (2007).[4]F. Fedichkin, P. Andreakou, B. Jouault, M. Vladimirova, T. Guillet, C. Brimont, P. Valvin, T. Bretagnon, A. Dussaigne, N. Grandjean, P. Lefebvre. Phys. Rev. B 91, 205424 (2015).

Ref HAL: hal-01223677_v1
DOI: 10.1103/PhysRevB.91.205308
WoS: WOS:000354972700009
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3 Citations
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Giant Kerr rotation and ellipticity are observed and investigated in an asymmetric planar microcavity with a quantum well in the active region. Rotation angle of the polarization plane as well as ellipticity were determined from time- and frequency-resolved measurements of the Stokes vector components of reflected light. It was found that in a small range of the cavity mode detunings the polarized pump pulse creates a large splitting of the lower polariton branch while leaving its linewidth almost the same. This fact gives a possibility to observe at such detunings the Kerr rotation angle and ellipticity, close to their extremes. A theoretical analysis shows that the decisive role in reaching extreme polarization rotation angles is played by the structure asymmetry. Comprehensive analysis of the polarization state of the light in this regime shows that both renormalization of the exciton energy and the saturation of the excitonic resonance contribute to the observed optical nonlinearities.

Ref HAL: hal-01181619_v1
DOI: 10.1364/OL.40.003667
WoS: 000358802800059
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12 Citations
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We report on spatially- and time-resolved emission measurements and observation of transport of indirect excitons in ZnO/MgZnO wide single quantum wells.