Accueil >
Production scientifique
|
|
Optical properties of ZnSe-ZnTe type II superlattices 
Auteur(s): Cloitre T., Briot N., Briot O., Boring P., Gil B., Aulombard R.
(Article) Publié:
Journal De Physique Iv (Proceedings), vol. 03 p.C5-421-C5-424 (1993)
Texte intégral en Openaccess : 
Ref HAL: jpa-00251677_v1
DOI: 10.1051/jp4:1993590
WoS: A1993ML21500091
Exporter : BibTex | endNote
2 Citations
Résumé: In this communication we show that the cancelation of excitonic effects by photo-injected carriers can be easily produced in ZnSe-ZnTe superlattices. This combination is interesting : it has a type II band alignment in real space. Strong confinements of electrons and holes by large bands offsets lead to important values of Rydberg energies ; thus, important energy-shifts of some 20 meV are measured when exciton screening is produced in such superlattices.
|
|
|
|
DEPTH PROFILING OF CARRIERS IN ZNSE/GAAS HETEROSTRUCTURES BY RAMAN-SPECTROSCOPY
Auteur(s): Pagès O., Renucci Ma, Briot O., Cloitre T., Aulombard R.
Conference: 5TH INTERNATIONAL CONF ON II-VI-COMPOUNDS ( II-VI-91 ) (Tamano, JP, 1991)
Actes de conférence: JOURNAL OF CRYSTAL GROWTH, vol. 117 p.569 (1992)
Ref HAL: hal-00547295_v1
Exporter : BibTex | endNote
Résumé: Non-intentionally doped ZnSe epilayers grown on (100) semi-insulating GaAs substrates by the MOVPE technique constitute heterostructures exhibiting "apparent" p-type conductivity, which we have investigated by Raman spectroscopy. The Raman spectrum of the substrate gives evidence of the presence of a p-type carrier gas in GaAs with p ranging from 10(18) to 10(20) cm-3, which appears as confined at the interface of ZnSe/GaAs. We have shown that the indium dots used for Hall-effect measurements diffuse through the epilayer up to the interfacial gas and concluded that this one is responsible for the large p-type conductivity of the samples. Moreover a quantitative analysis gives access to the interfacial gas thickness, typically 1000 angstrom.
|
|
|
|
METAL ORGANIC VAPOR-PHASE EPITAXY AND LUMINESCENCE STUDIES OF GAAS ZNSE DOUBLE HETEROSTRUCTURES
Auteur(s): Briot O., Briot N., Cloitre T., Aulombard R., Gil B., Mathieu H.
(Article) Publié:
Semiconductor Science And Technology, vol. 6 p.695 (1991)
Ref HAL: hal-00547297_v1
Exporter : BibTex | endNote
Résumé: Recently, III-V/II-VI single and double heterostructures have attracted much attention for device applications. The first demonstration of metal organic vapour phase epitaxy (MOVPE) of a GaAs/ZnSe/GaAs double heterostructure is reported. The influence of the ZnSe layer on the top GaAs layer is discussed from photoluminescence and reflectivity results.
|
