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(135) Production(s) de CLOITRE T.
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Epitaxial growth of ZnSiN2 single-crystalline films on sapphire substrates 
Auteur(s): Cloitre T., Sere A., Aulombard R.
Conference: Spring Meeting of the European-Materials-Research-Society (Strasbourg, FR, 2004-05-24)
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Growth of 3C-SiC on si by low temperature CVD
Auteur(s): Cloitre T., Moreaud N, Vicente P, Sadowski Ml, Aulombard R.
Conference: 3rd European Conference on Silicon Carbide and Related Materials (KLOSTER BANZ, DE, 2000)
Ref HAL: hal-01816691_v1
DOI: 10.4028/www.scientific.net/MSF.353-356.159
WoS: WOS:000168535200039
Exporter : BibTex | endNote
3 Citations
Résumé: We report on the growth of 3C-SiC/Si using propane and silane as precursor gases. All layers were deposited on exactly < 100 > oriented Si substrates. The growth temperature ranged from 1200 degreesC to 1350 degreesC and the carbonization temperature from 1150 degreesC to 1350 degreesC. We focused our study on the optimization of the surface morphology and the suppression of interfacial voids at low growth temperature. All layers were characterized by X-ray diffraction (both single diffraction and omega -scan), micro-Raman on cleaved edges, AFM, optical microscopy,2K photoluminescence and IR reflectivity. We have developed a 1150 degreesC carbonization step which, combined with a growth temperature of 1250 degreesC results in good quality material.
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Optimization of the carbonized buffer layer for the growth of high quality single crystal SiC on Si
Auteur(s): Cloitre T., Moreaud N., Vicente P., Sadowski M., Moret M., Aulombard R.
Conference: MRS Fall meeting (Boston (USA), US, 2000-11-27)
Actes de conférence: MRS Online Proceedings Library, vol. 640 p.H5.12 (2000)
Ref HAL: hal-03975941_v1
DOI: 10.1557/PROC-640-H5.12
Exporter : BibTex | endNote
Résumé: ABSTRACT Carbonized buffer layers were formed on Si (100) nominally oriented substrates with propane diluted in palladium purified hydrogen in a cold wall vertical reactor. Subsequent SiC layers were grown using silane and propane at atmospheric pressure. The growth temperature was ranging from 1150°C to 1350°C. The layers obtained were characterized by LT photoluminescence, IR reflectivity, X-ray diffraction, micro-Raman on cleaved edges, AFM imaging, and optical microscopy. Drastic influence on the layer surface morphology was evidenced depending on the transition step between the carbonization and the SiC epitaxial growth. As a result, we have developed a carbonization process leading to very high quality 3CSiC films grown at 1250°C.
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Stimulated emission and optical gain in a single MOVPE-grown Zn x Cd 1 − x S e − Z n S e quantum well
Auteur(s): Tomašiūnas R., Pelant I., Hönerlage B., Levy R., Cloitre T., Aulombard R.
(Article) Publié:
Physical Review B, vol. 57 p.13077 - 13085 (1998)
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A Raman study of coupled plasmon—LO phonon modes at ZnSe—GaAs interfaces
Auteur(s): Pages O., Soltani M., Zaoui A., Certier M., Laurenti J.P., Cloitre T., Aulombard R., Bormann D., Khelifa B.
Conference: 8th International Conference on II-VI Compounds (Grenoble, FR, 1998-08-25)
Actes de conférence: JOURNAL OF CRYSTAL GROWTHVolume: 184Pages: 188-192, vol. 184-185 p.188 - 192 (1998)
Texte intégral en Openaccess : 
Ref HAL: hal-01816844_v1
DOI: 10.1016/S0022-0248(98)80319-9
WoS: 000072653800038
Exporter : BibTex | endNote
3 Citations
Résumé: Raman scattering is used to investigate p-type accumulation zones on the substrate side of ZnSe—GaAs heterostructures. The intensity imbalance between (i) the near-interfacial phonon-plasmon coupled mode located below the TO frequency and (ii) the uncoupled LO mode from the deep substrate, is studied at a single wavelength under increasing illumination. Competition between electric field-induced scattering and more trivial scattering volume effects is discussed.
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Light amplification due to free and localized exciton states in ZnCdSe GRINSCH structures
Auteur(s): Mikulskas I., Luterová K., Tomasiunas R., Hönerlage B., Cloitre T., Aulombard R.
(Article) Publié:
Applied Physics A: Materials Science & Processing, vol. 67 p.121 - 124 (1998)
Texte intégral en Openaccess :
Ref HAL: hal-01816833_v1
DOI: 10.1007/s003390050748
WoS: 000074728000018
Exporter : BibTex | endNote
1 Citation
Résumé: In this paper we present measurements of light amplification in optically pumped ZnCdSe GRINSCH (graded refraction index separate confinement heterostructures), In several differently designed samples we observe the presence of two gain mechanisms, which involve localized excitons and exciton-exciton inelastic scattering processes, respectively. The influence of the GRINSCH sample structure on gain is discussed in terms of their improved light-guiding properties.
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