Ref HAL: hal-01961322_v1
Exporter : BibTex | endNote
Résumé:

In this talk, I will discuss the striking co-existence of a high internal quantum efficiency and an indirect bandgap in hexagonal boron nitride.

Ref HAL: hal-01957683_v1
Exporter : BibTex | endNote

Ref HAL: hal-01863526_v1
DOI: 10.1063/1.5029220
WoS: 000435987400038
Exporter : BibTex | endNote
17 Citations
Résumé:

We report on the controlled growth of h-BN/graphite by means of molecular beam epitaxy. X-Ray photoelectron spectroscopy suggests the presence of an interface without any reaction or intermixing, while the angle resolved photoemission spectroscopy (ARPES) measurements show that the h-BN layers are epitaxially aligned with graphite. A well-defined band structure is revealed by ARPES measurements, reflecting the high quality of the h-BN films. The measured valence band maximum located at 2.8 eV below the Fermi level reveals the presence of undoped h-BN films (band gap similar to 6 eV). These results demonstrate that, although only weak van der Waals interactions are present between h-BN and graphite, a long range ordering of h-BN can be obtained even on polycrystalline graphite via van der Waals epitaxy, offering the prospect of large area, single layer h-BN

Ref HAL: hal-01807107_v1
DOI: 10.1103/PhysRevB.97.155435
WoS: WOS:000431978700003
Exporter : BibTex | endNote
18 Citations
Résumé:

Hexagonal boron nitride (h-BN) is a layered crystal that is attracting a great deal of attention as a promising material for nanophotonic applications. The strong optical anisotropy of this crystal is key to exploit polaritonic modes for manipulating light-matter interactions in 2D materials. h-BN has also great potential for solid-state neutron detection and neutron imaging devices, given the exceptionally high thermal neutron capture cross section of the boron-10 isotope. A good knowledge of phonons in layered crystals is essential for harnessing long-lived phonon-polariton modes for nanophotonic applications and may prove valuable for developing solid-state 10BN neutron detectors with improved device architectures and higher detection efficiencies. Although phonons in graphene and isoelectronic materials with a similar hexagonal layer structure have been studied, the effect of isotopic substitution on the phonons of such lamellar compounds has not been addressed yet. Here we present a Raman scattering study of the in-plane high-energy Raman active mode on isotopically enriched single-crystal h-BN. Phonon frequency and lifetime are measured in the 80–600-K temperature range for 10B-enriched, 11B-enriched, and natural composition high quality crystals. Their temperature dependence is explained in the light of perturbation theory calculations of the phonon self-energy. The effects of crystal anisotropy, isotopic disorder, and anharmonic phonon-decay channels are investigated in detail. The isotopic-induced changes in the phonon density of states are shown to enhance three-phonon anharmonic decay channels in 10B-enriched crystals, opening the possibility of isotope tuning of the anharmonic phonon decay processes.

Ref HAL: hal-01712338_v1
DOI: 10.1103/PhysRevMaterials.2.024001
WoS: 000424196500001
Exporter : BibTex | endNote
17 Citations
Résumé:

The giant birefringence of layered h-BN was demonstrated by analyzing the interference patterns in reflectance and transmittance measurements in the mid-infrared to the deep ultraviolet energy range. The refractive index for polarization perpendicular to the c axis is much higher than the refractive index for polarization parallel to the c axis, and it displays a strong increase in the ultraviolet range that is attributed to the huge excitonic effects arising from the unique electronic structure of h-BN. Thus, h-BN is shown to exhibit a giant negative birefringence that ranges from −0.7 in the visible to −2 in the deep ultraviolet close to the band gap. The electronic dielectric constants for polarization perpendicular and parallel to the c axis were determined to be ε∞⊥ = 4.95 and ε∞∥ = 2.86, respectively. The anisotropy we find in high-quality h-BN is significantly larger than proposed in previous experimental studies but in excellent agreement with ab initio calculations.

Ref HAL: hal-01698220_v1
Ref Arxiv: 1708.05238
DOI: 10.1103/PhysRevB.97.035303
WoS: WOS:000419615100007
Ref. & Cit.: NASA ADS
Exporter : BibTex | endNote
15 Citations
Résumé:

We addressed the carrier dynamics in so-called G-centers in silicon (consisting of substitutional-interstitial carbon pairs interacting with interstitial silicons) obtained via ion implantation into a silicon-on-insulator wafer. For this point defect in silicon emitting in the telecommunication wavelength range, we unravel the recombination dynamics by time-resolved photoluminescence spectroscopy. More specifically, we performed detailed photoluminescence experiments as a function of excitation energy, incident power, irradiation fluence and temperature in order to study the impact of radiative and non-radiative recombination channels on the spectrum, yield and lifetime of G-centers. The sharp line emitting at 969 meV ($\sim$1280 nm) and the broad asymmetric sideband developing at lower energy share the same recombination dynamics as shown by time-resolved experiments performed selectively on each spectral component. This feature accounts for the common origin of the two emission bands which are unambiguously attributed to the zero-phonon line and to the corresponding phonon sideband. In the framework of the Huang-Rhys theory with non-perturbative calculations, we reach an estimation of 1.6$\pm$0.1 $\angstrom$ for the spatial extension of the electronic wave function in the G-center. The radiative recombination time measured at low temperature lies in the 6 ns-range. The estimation of both radiative and non-radiative recombination rates as a function of temperature further demonstrate a constant radiative lifetime. Finally, although G-centers are shallow levels in silicon, we find a value of the Debye-Waller factor comparable to deep levels in wide-bandgap materials. Our results point out the potential of G-centers as a solid-state light source to be integrated into opto-electronic devices within a common silicon platform.

Commentaires: . Réf Journal: Phys. Rev. B 97, 035303 (2018)

Ref HAL: hal-01697455_v1
DOI: 10.1063/1.5019629
WoS: 000424053600017
Exporter : BibTex | endNote
6 Citations
Résumé:

The elastic constants of high-quality, single-crystal hexagonal boron nitride (h-BN) have been measured by means of high resolution Brillouin spectroscopy using a modified reflected light microscope. The sound propagation velocity in the c-axis direction and perpendicular to the c-axis have been obtained from the Brillouin frequency shift, with a proper account taken of the vast difference between the ordinary and extraordinary refractive indices recently reported in the highly anisotropic layered h-BN crystal. The elastic constants c11 and c33 obtained from the Brillouin experiments are somewhat lower than previous determinations based on inelastic x-ray measurements and confirm the overestimation of the h-BN elastic constants by ab initio calculations based on density functional perturbation theory in the local density approximation.