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(19) Production(s) de CAMARA N.
Almost free standing Graphene on SiC(000-1) and SiC(11-20) Auteur(s): Jabakhanji B., Camara N., Caboni Alessandra, Consejo C., Jouault B., Godignon Philippe, Camassel J.
Conference: HETEROSIC & WASMPE 2011 (KREUZSTRASSE 10, 8635 DURNTEN-ZURICH, CH, 2011) |
Raman spectroscopy of epitaxial graphene Auteur(s): Tiberj A., Huntzinger J.-R., Paillet M., Zahab A. A., Contreras S., Camassel J., Sauvajol J.-L., Camara N., Caboni Alessandra, Godignon Philipe (Affiches/Poster) GDRI GNT 2012 (Lyon, FR), 2012-01-24 |
Micro-Raman and micro-transmission studies of Graphene on 6H-SiC Auteur(s): Tiberj A., Huntzinger J.-R., Camara N., Godignon Philipe, Camassel J.
Conférence invité: Epigraphic Workshop on the Science and Applications of Epitaxial Graphene on SiC (Catania, IT, 2012-12-04) |
Weak localization and universal conductance fluctuations on epitaxial graphene grown on the C-face of 8 degrees off-axis 4H-SiC substrates Auteur(s): Jabakhanji B., Camara N., Consejo C., Jouault B.
Conference: ADVANCES IN INNOVATIVE MATERIALS AND APPLICATIONS (KREUZSTRASSE 10, 8635 DURNTEN-ZURICH, CH, 2011) |
Multidimensional characterization, Landau levels and Density of States in epitaxial graphene grown on SiC substrates Auteur(s): Camara N., Jouault B., Jabakhanji B., Caboni Alessandra, Tiberj A., Consejo C., Godignon Philipe, Camassel J. (Article) Publié: Nanoscale Research Letters, vol. 6 p.141 (2011) Texte intégral en Openaccess : |
Epitaxial Graphene Growth on alpha-SiC: Probing the Effect of Surface Orientation Auteur(s): Camara N., Jouault B., Caboni A., Tiberj A., Godignon P., Camassel J. (Article) Publié: Nanoscience And Nanotechnology Letters, vol. 3 p.49-54 (2011) |
Micro-Raman and micro-transmission imaging of epitaxial graphene grown on the Si and C faces of 6H-SiC Auteur(s): Tiberj A., Camara N., Godignon Philippe, Camassel J. (Article) Publié: Nanoscale Research Letters, vol. 6 p.478 (2011) Texte intégral en Openaccess : |