Ref HAL: hal-03037689_v1
DOI: 10.1109/IRMMW-THz.2018.8510039
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We report on the temperature-dependent magneto absorption and magnetotransport spectroscopy of HgTe/CdHgTe quantum wells above the critical well thickness d(c). Our results, obtained in magnetic fields up to 16 T and temperature range from 1.7 to 150 K, clearly indicate a change in the band-gap energy with temperature. A topological phase transition between quantum spin Hall and trivial insulator states, revealing appearance of single-valley Dirac fermions at T = 27 and 90 K for 6.5 and 8 nm QWs respectively, was clearly observed in our magnetospectroscopy measurements.

Commentaires: 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Nagoya, JAPAN, SEP 09-14, 2018

Ref HAL: hal-01862289_v1
DOI: 10.1103/PhysRevB.97.245419
WoS: WOS:000436036700007
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10 Citations
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We report on temperature-dependent terahertz spectroscopy of a three-layer InAs/GaSb/InAs quantum well (QW) with inverted-band structure. The interband optical transitions, measured up to 16 T at different temperatures by Landau-level magnetospectroscopy, demonstrate the inverted-band structure of the QW. The terahertz photoluminescence at different temperatures allows us to directly extract the optical gap in the vicinity of the Γ point of the Brillouin zone. Our results experimentally demonstrate that the gap in the three-layer QWs is temperature independent and exceeds by four times the maximum band gap available in the inverted InAs/GaSb bilayers.

Ref HAL: hal-01802768_v1
DOI: 10.1016/j.spmi.2018.05.033
WoS: 000445713700016
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Lead halide perovskites, used to produce photovoltaic devices, have been thesubject of a huge research effort these last years. This is due to the spectac-ular improvement of the conversion effciency results within a short amount oftime. However, some issues have been identified, which include stability, leaduse and cost of some precursors. It has recently been shown that low purity, lowcost PbI2 could be succesfully used in the synthesis of the MAPbI3 perovskite,provided that HCl is added during the synthesis to prevent solubility problems.Thus, it is of high interest to provide information pertaining to the materialquality, in relation with the HCl additions performed during synthesis. In thiswork, we have grown three sets of samples with different HCl to (PbI 2 + MAI)molar ratios (R HCl ), where PbI2 and methylamine iodide (MAI) are the precur-sors of the perovskite. We used RHCl = 0 (no HCl), 0.5 and 1.2 . We performedx-ray diffraction, transmittance and 77K photoluminescence experiments in or-der to assess the material structural and optoelectronic properties and foundthat an optimum HCl concentration must be used. HCl introduction clearlyhas a beneficial effect both on domain sizes and photoluminescence intensityat RHCl = 0.5, but lead to subsequent degradation of the perovskite quality athigher RHCl .

Ref HAL: hal-01784269_v1
DOI: 10.1088/2053-1591/aab8c5
WoS: 000429835000001
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6 Citations
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We report on the growth of GaSe films by molecular beam epitaxy on both (111)B GaAs and sapphire substrates. X-ray diffraction reveals the perfect crystallinity of GaSe with the c-axis normal to the substrate surface. The samples grown under Ga rich conditions possess an additional gallium film on top of the monochalcogenide layer. This metallic film shows two normal-to-superconducting transitions which are detected at T c ≈ 1.1 K and 6.0 K. They correspond likely to the β and α-phases of gallium in the form of bulk and droplets respectively. Our results demonstrate that van der Waals epitaxy can lead to future high quality hybrid superconductor/monochalcogenide heterostructures.

Ref HAL: hal-01740166_v1
Ref Arxiv: 1710.06666
DOI: 10.1103/PhysRevLett.120.086401
WoS: WOS:000425738500007
Ref. & Cit.: NASA ADS
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29 Citations
Résumé:

We report a direct observation of temperature-induced topological phase transition between trivial and topological insulator in HgTe quantum well. By using a gated Hall bar device, we measure and represent Landau levels in fan charts at different temperatures and we follow the temperature evolution of a peculiar pair of "zero-mode" Landau levels, which split from the edge of electron-like and hole-like subbands. Their crossing at critical magnetic field Bc is a characteristic of inverted band structure in the quantum well. By measuring the temperature dependence of Bc, we directly extract the critical temperature Tc at which the bulk band-gap vanishes and the topological phase transition occurs. Above this critical temperature, the opening of a trivial gap is clearly observed.

Commentaires: 5 pages + Supplemental Materials

Ref HAL: hal-01596720_v1
DOI: 10.1016/j.solmat.2017.09.019
WoS: 000415392500050
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12 Citations