Accueil > Production scientifique
Semi-conducteurs: Graphène, Grand gap & Photovoltaïque
(27) Production(s) de l'année 2017
Low p-doped epitaxial graphene :
Ambipolar quantum Hall effect and huge non-local resistance Auteur(s): Nanot S., Nachawaty A., Desrat W., Jouault B., Yang M., Escoffier W., Cresti A. (Affiches/Poster) GDR PHYSIQUE QUANTIQUE MESOSCOPIQUE - SESSION PLENIERE 2017 (Aussois, FR), 2017-12-04 |
WIRE STUB ANTENNA FOR USE IN MAGNETIC RESONANCE IMAGING AND SPECTROSCOPY Auteur(s): Coillot C., Alibert E., Nativel Eric, Zanca M., Goze-Bac C. Brevet: #WO2017194631A1, (2017) |
Quantum Dot based UV Light Emitting Diodes Auteur(s): Brault Julien, Matta S., Al Khalfioui Mohamed, Leroux Mathieu, Damilano Benjamin, Chenot S., Korytov M, Peyre H., Konczewicz L., Contreras S., Chaix C., Massies Jean, Gil B. (Affiches/Poster) 12th international conference on nitride semiconductors (STRASBOURG, FR), 2017-07-24 |
High Temperature Electrical Transport Study of MBE grown Mg-doped AlGaN Auteur(s): Contreras S., Konczewicz L., Juillaguet S., Peyre H., Al khalfioui Mohamed, Matta S., Leroux Mathieu, Damilano Benjamin, Brault Julien (Affiches/Poster) 12th international conference on nitride semiconductors (STRASBOURG, FR), 2017-07-24 |
High temperature electrical transport study of n-type Si-doped AlN Auteur(s): Contreras S., Konczewicz L., Peyre H., Juillaguet S., Weyher J.l., Dziecielewski I, Al khalfioui Mohamed, Matta S., Leroux Mathieu, Damilano Benjamin, Brault Julien, Gil B. (Affiches/Poster) International Workshop on Ultraviolet Materials and Devices (FUKUOKA, JP), 2017-11-14 |
High Temperature Annealing of MBE-grown Mg-doped GaN Auteur(s): Contreras S., Konczewicz L., Peyre H., Juillaguet S., Al Khalfioui M., Matta S., Leroux M., Damilano B., Brault J.
Conference: 33RD INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS (Peking, CN, 2017) |
Optical investigations and strain effect in AlGaN/GaN epitaxial layers Auteur(s): Jayasakthi M., Juillaguet S., Peyre H., Konczewicz L., Moret M., Briot O., Baskar K., Contreras S.
Conference: 33RD INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS (PEKIN, CN, 2017) |