Laboratoire Charles Coulomb UMR 5221 CNRS/UM2 (L2C)

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(24) Production(s) de l'année 2018

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+ Spectroscopy of temperature-driven single valley Dirac fermions in HgTe/CdHgTe quantum wells doi link

Auteur(s): Kadykov A., Krishtopenko S., Jouault B., Desrat W., Marcinkiewicz M., Ruffenach S., Consejo C., Torres J., Morozov S. V., Gavrilenko V. I., Mikhailov N. N., Dvoretskii S. A., Knap W., Teppe F.

Conference: 2018 43RD INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ) (345 E 47TH ST, NEW YORK, NY 10017 USA, ZZ, 2018-09-09)
Actes de conférence: International Conference on Infrared Millimeter and Terahertz Waves, vol. p. (2018)


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+ Quantum Hall resistance standard in graphene grown by CVD on SiC: state-of-the-art of the experimental mastery hal link

Auteur(s): Brun-Picard J., Dagher R., Mailly D., Nachawaty A., Jouault B., Michon A., Poirier W., Schopfer F.

Conference: 2018 CONFERENCE ON PRECISION ELECTROMAGNETIC MEASUREMENTS (CPEM 2018) (345 E 47TH ST, NEW YORK, NY 10017 USA, ZZ, 2018)


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+ 4H-SIC p-type doping determination from secondary electrons imaging hal link

Auteur(s): Kayambaki M, Makris N., Tsagarakis K., Peyre H., Stavrinidis A, Zekentes K.

Conference: 12th European Conference on Silicon Carbide and Related Materials (ECSCRM) (Birmingham, GB, 2018-09-02)


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+ Beauty of quantum transport in Graphene hal link

Auteur(s): Jouault B.(Corresp.), Schopfer F., Poirier W.

Chapître d'ouvrage: Epitaxial Graphene On Silicon Carbide Modeling Characterization And Applications, vol. p.193 (2018)


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+ Robustness of the quantum Hall effect of graphene on Silicon Carbide hal link

Auteur(s): Nachawaty A., Ming Yang, Nanot S., Cresti Alessandro, Escoffier Walter, Jouault B.

Conference: 3rd International Conference on Physics of 2D Crystals (ICP2C3) (La Valletta, MT, 2018-05-29)


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+ Electronic properties of epitaxial graphene close to the charge neutrality point hal link

Auteur(s): Nachawaty A., Nanot S., Cresti Alessandro, Escoffier Walter, Jouault B.

Conference: Annual meeting of the GDRi Graphene & Co (Sète, FR, 2018-10-15)


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+ Photoluminescence of GaN and AlxGa1-xN (x≤ 0.2) doped with Mg and grown by molecular beam epitaxy

Auteur(s): Leroux Mathieu, Brault Julien, Matta S., Al khalfioui Mohamed, Damilano Benjamin, Contreras S., Juillaguet S., Konczewicz L., Gil B., Brochen S.

(Affiches/Poster) JNMO (Cap Esterel-Aguay, FR), 2018-06-13


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