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Physique Appliquée
(71) Production(s) de l'année 2016
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Metal composite as backing for ultrasonic transducers dedicated to non-destructive measurements in hostile 
Auteur(s): Boubenia Redha, Rosenkrantz Eric, Despetis F., Combette Philippe, Ferrandis Jean-Yves
Conference: 5th International Conference on Materials and Applications for Sensors and Transducers (IC-MAST2015) (Mykonos, GR, 2015-09-27)
Actes de conférence: IOP Conference Series: Materials Science and Engineering, vol. 108 p.012007 (2016)
Texte intégral en Openaccess : 
Ref HAL: hal-01952334_v1
DOI: 10.1088/1757-899X/108/1/012007
WoS: 000376204700007
Exporter : BibTex | endNote
Résumé: Our team is specialized in ultrasonic measurements in hostile environment especially under high temperatures. There is a need for acoustic transducers capable of continuous measurement at temperatures up to 700°C. To improve the performances of acoustic sensors we focus our works on the realisation and characterisation of transducer backings able to operate under very high temperature. Commercially, they are produced by the incorporation of tungsten powder in a plastic matrix, which limits the working temperature. The realisation of ultrasonic transducers for non-destructive measures at high temperatures requires adequate materials, manufacturing and assembly processes. To produce the backings, composites were made using very ductile metals such as tin and tungsten. These composites are manufactured by uniaxial hot pressing. First, we studied the influence of temperature and pressure on the densification of tin pellets. Then, several specimens made of tin/W were made and characterised by measuring the specific weight, speed and attenuation of sound. The acoustic measures were realised by ultrasonic spectroscopy. This test-bench was designed and tested on control samples of PMMA and on standard backings (epoxy / tungsten).
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High Temperature Stability of Electrical and Optical Properties of Bulk GaN:Mg Grown by HNPS Method in Different Crystallographic Directions
Auteur(s): Sadovyi B., Amilusik M., Staszczak G., Bockowski M., Grzegory I., Porowski S., Konczewicz L., Tsybulskyi V., Panasyuk M., Rudyk V., Karbovnyk I., Kapustianyk V., Litwin-Staszewska E., Piotrzkowski R.
(Article) Publié:
Acta Physica Polonica A, vol. 129 p.A126-A128 (2016)
Texte intégral en Openaccess :
Ref HAL: hal-01944980_v1
DOI: 10.12693/APhysPolA.129.A-126
WoS: WOS:000371623600032
Exporter : BibTex | endNote
1 Citation
Résumé: Single crystals of Mg-doped GaN grown by high nitrogen pressure solution method in different crystallographic directions ([0001], [101̅1], and [101̅1̅]) were investigated in order to determine thermal stability of their electrical and optical properties. Obtained dependences of resistivity, the Hall coefficient and energy shift of Mg-related photoluminescence peak on annealing temperature allow to suggest that incorporation of Mg in GaN is significantly influenced by the direction of the crystallization front.
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Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiC
Auteur(s): Contreras S., Konczewicz L., Kwasnicki P., Arvinte Roxana, Peyre H., Chassagne Thierry, Zielinski Marcin, Kayambaki Maria, Juillaguet S., Zekentes Konstantinos
Conference: 16th International Conference on Silicon Carbide and Related Materials (Catane, IT, 2015-10-05)
Actes de conférence: Material Sciences Forum, vol. 858 p.249 - 252 (2016)
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p-Type Doping of 4H- and 3C-SiC Epitaxial Layers with Aluminum
Auteur(s): Zielinski Marc, Arvinte Roxana, Chassagne Thierry, Michon Adrien, Portail Marc, Kwasnicki P., Konczewicz L., Contreras S., Juillaguet S., Peyre H.
Conference: ICSCRM (Giardini Naxos, FR, 2015-10-02)
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Hall effect measurement from basic concept to electrical counter,
S. Contreras
Auteur(s): Contreras S.
(Séminaires)
Holiday Inn Express -Odysseum 2 (Montpellier, FR), 2016-09-02
Commentaires: PROMIS – Postgraduate Research on Dilute Metamorphic Nanostructures and Metamaterials in Semiconductor Photonics, Marie Sklodowska-Curie Initial Training network (ITN), PROMIS Summer School, 31st August – 9th September, 2016, Montpellier
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Terahertz cyclotron emission from HgCdTe bulk films
Auteur(s): But D., Consejo C. , Krishtopenko S., Diakonova N., Kadykov A., Michailov N. n., Dvoretskii S. A., Gavrilenko V., Morozov S., Teppe F., Knap W.
Conference: 2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz) (Copenhagen, DK, 2016-09-25)
Ref HAL: hal-01932679_v1
DOI: 10.1109/IRMMW-THz.2016.7758889
Exporter : BibTex | endNote
Résumé: We report on THz emission from HgCdTe bulk films. Our experiments clearly show magnetically tunable THz emission that can be attributed to electron radiative recombination between the Landau levels (cyclotron emission). Energy band structure theoretical calculations using Kane Hamiltonian are performed. They allow identification of observed resonances as related to transitions between two lowest conduction band Landau levels.
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