Nanophotonics is an emerging field where researchers look for potential application of carbon nanotubes (SWNT) in the framework of silicon photonics technology, due to SWNT ability to emit, modulate and detect light in the wavelength range of silicon transparency.In this field of nanotube photonics, a first milestone was to couple light emission from SWNT into silicon waveguides [1]. Current researches focus on coupling SWNT with optical cavities, either for enhancing nanotube photoluminescence (PL) or nonlinear optical phenomena at the nanoscale, using microdisk resonators, or photonic crystal cavities. However, these kinds of cavities could not be easily coupled to silicon waveguides, hindering subsequent integration into more complex photonic devices.Building up on our previous work [2], we propose to couple SWNT PL with silicon microring resonators in a fully integrated configuration, with an acess waveguide [3]. PL coupled to microring modes could be collected from the access waveguide, with efficient rejection on non-resonant photons. Emission quality factor up to 8000 were observed. This design allow for collinear excitation of SWNT through the access waveguide, leading to efficient excitation and collection of SWNT PL at different wavelengths. The requirement for out-of-the-plane SWNT excitation is lifted, underlining the pertinence of this approach for realistic carbon nanotube based photonic devices.References1. E. Gaufrès, N. Izard, A. Noury, X. Le Roux, G. Rasigade, A. Beck and L. Vivien, ACS Nano 6, 3813 (2012)2. A. Noury, X. Le Roux, L Vivien and N. Izard, Nanotechnology 25, 215201 (2014)3. A. Noury, X. Le Roux, L. Vivien and N. Izard, Nanotechnology 26, 345201 (2015)

Thermal decomposition of silicon carbide (SiC) provides transfer free and wafer-scale homogeneous graphene forming on a semi-insulating substrate. Large-area monolayer graphene growth was initially developed at the atmospheric pressure (around 900 mbar) in an argon ambient and at high temperature (>1650°C). However, it remains challenging to obtain films with different and controlled characteristics such as the number of graphene layers or the doping by tuning the growth parameters. In this work, we optimized the epitaxial growth of monolayer graphene (1LG) on 4H-SiC (0001) under a low argon pressure of 10 mbar. This intermediate pressure allows growing a continued 1LG in a short process time of ~1h30. Here, we discuss the initial growth stages from buffer layer to 1LG as a function of annealing temperature (same heating rate). The combined Raman spectroscopy and atomic force microscopy (AFM) analyses show that a buffer layer, fully covering the Si-face of SiC, forms as the first step of growth (1600°C). Subsequently, 1LG starts to grow at step edges (1700°C) and continue to cover the buffer layer with a step-flow growth mechanism, as shown in the literature. Eventually, continued large-scale graphene films were achieved at 1750°C with a reproducible process. These graphene films were characterised by Raman, STM and electrical measurement. The integrated intensity of G-band in Raman spectra normalized with respect to a HOPG reference, AG/AG-HOPG, of each spectrum in Raman map is very close to the experimental value reported for a 1LG. Atomically resolved scanning tunnelling microscopy evidences a (6x6) superstructure, indicative of 1LG covering a reconstructed interface layer. Moreover, quantum Hall plateau values observed in our graphene layers confirmed both continuity and thickness of the 1LG film. The carrier density of pHall~1010 - 1011 cm-2 in 1LG films can be achieved at 1.7K in helium atmosphere. Thus, our as-grown 1LG graphene films with low p-type carrier density provide perspectives for further studies and applications on graphene.

The control of structuring and morphology in hybrid solids is a key parameter for the design of functional materials. In particular, it has been shown that structure and morphology could be tuned through sol gel synthesis conditions in bridged silsesquioxanes (BS). As a matter of fact, during sol-gel process, the competition between self-assembing through non covalent interactions between the organic sub-structures and condensation of the inorganic siliceous sub-structure can lead to the formation of crystalline compounds or amorphous materials.In order to go further with the understanding of the control of the nanostructuring in bridged silsequioxane, we designed the organic moieties of the precursors with either 2 symetrical through hydrogen bond and the strength of these hydrogen bonds is studied through vibrational spectroscopies in-situ at low temperature or at high pressure. The results are analyzed and discussed in terms of H bond strength and geometric factors.In the second part of this talk, we will focus on the influence of the central subunit lying between the two urea/thiourea groups_either a long flexible alkyl chain or rigid phenyl group_ on the self-assembling properties through H bonds.

Bridged silsesquioxane nanomaterials exhibit original mechanical properties thanks to the association of non-covalent and covalent interactions. Thanks to in situ high pressure spectroscopic studies, achieved in diamond anvil cells, the mechanical behavior of these materials was followed as a function of pressure. Vibrational studies coupled to ab-initio simulations show that mechanical constrains are absorbed by the modulation of H bond interactions. We thus show that the rigidity yielded by the inorganic polymerization is counterbalanced by the presence of the intermolecular H bond network. In a large range of pressures, these hybrid materials have a reversible behavior, and thus behave as molecular springs. In a second time, we demonstrate that the pressure behavior of these molecular spring is sensitive to the conformation of H bonds (cyclic versus linear) and to the constraints imposed the covalent inorganic network.

Energy decay plays a central role in a wide range of phenomena1,2,3, such as optical emission, nuclear fission, and dissipation in quantum systems. Energy decay is usually described as a system leaking energy irreversibly into an environmental bath. Here, we report on energy decay measurements in nanomechanical systems based on multilayer graphene that cannot be explained by the paradigm of a system directly coupled to a bath. As the energy of a vibrational mode freely decays, the rate of energy decay changes abruptly to a lower value. This finding can be explained by a model where the measured mode hybridizes with other modes of the resonator at high energy. Below a threshold energy, modes are decoupled, resulting in comparatively low decay rates and giant quality factors exceeding 1 million. Our work opens up new possibilities to manipulate vibrational states4,5,6,7, engineer hybrid states with mechanical modes at completely different frequencies, and to study the collective motion of this highly tunable system.