Accueil > Production scientifique
Physique Appliquée
(56) Production(s) de l'année 2017
Quantum Dot based UV Light Emitting Diodes Auteur(s): Brault Julien, Matta S., Al Khalfioui Mohamed, Leroux Mathieu, Damilano Benjamin, Chenot S., Korytov M, Peyre H., Konczewicz L., Contreras S., Chaix C., Massies Jean, Gil B. (Affiches/Poster) 12th international conference on nitride semiconductors (STRASBOURG, FR), 2017-07-24 |
High Temperature Electrical Transport Study of MBE grown Mg-doped AlGaN Auteur(s): Contreras S., Konczewicz L., Juillaguet S., Peyre H., Al khalfioui Mohamed, Matta S., Leroux Mathieu, Damilano Benjamin, Brault Julien (Affiches/Poster) 12th international conference on nitride semiconductors (STRASBOURG, FR), 2017-07-24 |
High temperature electrical transport study of n-type Si-doped AlN Auteur(s): Contreras S., Konczewicz L., Peyre H., Juillaguet S., Weyher J.l., Dziecielewski I, Al khalfioui Mohamed, Matta S., Leroux Mathieu, Damilano Benjamin, Brault Julien, Gil B. (Affiches/Poster) International Workshop on Ultraviolet Materials and Devices (FUKUOKA, JP), 2017-11-14 |
HgCdTe as a playground for massless fermions Auteur(s): Teppe F., Krishtopenko S.
Conférence invité: 7th International Symposium on Terahertz Nanosciences (Porquerolles, FR, 2017-10-02) |
Temperature-driven massless fermions in HgCdTe heterostructures Auteur(s): Teppe F.
Conférence invité: SPIE Optical Engineering + Applications (San Diego, CA, US, 2017-08-06) |
Terahertz studies of semi-relativistic fermions in HgCdTe heterostructures Auteur(s): Teppe F.
Conférence invité: Russia-Japan-USA-Europe Symposium on Fundamental & Applied Problems of Terahertz Devices & Technolog (Troy, NY, US, 2017-10-02) |
High Temperature Annealing of MBE-grown Mg-doped GaN Auteur(s): Contreras S., Konczewicz L., Peyre H., Juillaguet S., Al Khalfioui M., Matta S., Leroux M., Damilano B., Brault J.
Conference: 33RD INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS (Peking, CN, 2017) |