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Growth of low doped monolayer graphene on SiC(0001) viasublimation at low argon pressure 
Auteur(s): Landois P. , Wang T., Nachawaty A., Bayle M., Decams J.M., Desrat W., Zahab A. A., Jouault B., Paillet M., Contreras S.
(Article) Publié:
Physical Chemistry Chemical Physics, vol. p.10.1039/c7cp01012e (2017)
Ref HAL: hal-01540335_v1
DOI: 10.1039/c7cp01012e
WoS: 000403965500023
Exporter : BibTex | endNote
5 Citations
Résumé: Silicon carbide (SiC) sublimation is the most promising option to achieve transfer-free graphene at the wafer-scale. We investigated the initial growth stages from the buffer layer to monolayer graphene on SiC(0001) as a function of annealing temperature at low argon pressure (10 mbar). A buffer layer, fully covering the SiC substrate, forms when the substrate is annealed at 1600°C. Graphene formation starts from the step edges of the SiC substrate at higher temperature (1700°C). The spatial homogeneity of the monolayer graphene was observed at 1750°C, as characterized by Raman spectroscopy and magneto-transport. Raman spectroscopy mapping indicated an AG-graphene/AG-HOPG ratio of around 3.3%, which is very close to the experimental value reported for a graphene monolayer. Transport measurements fromroom temperature down to 1.7 K indicated slightly p-doped samples (p~10^10cm-2) and confirmed both continuity and thickness of the monolayer graphene film. Successive growth processes have confirmed the reproducibility and homogeneity of these monolayer films.
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