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Physique Appliquée
(81) Production(s) de l'année 2018
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Evolution of the Mechanical Properties During the Gel–Glass Process 
Auteur(s): Woignier Thierry, Despetis F., Etienne P., Alaoui Adil, Duffours L, Phalippou Jean
Chapître d'ouvrage: Handbook Of Sol-Gel Science And Technologyprocessing: Characterization And Applications, vol. p.1487 - 1512 (2018)
Texte intégral en Openaccess : 
Ref HAL: hal-01929802_v1
DOI: 10.1007/978-3-319-32101-1_43
Exporter : BibTex | endNote
Résumé: Different kinds of structure in alcogels and aerogels (fractal or not fractal) can be synthesized by a control of the chemical parameters and also by different steps in the preparation such as sintering and plastic compaction. The porosity of the gelsis affected either by the adjustment of the gelifying concentration, by a precise control of the viscous flow sintering process, or by an isostatic pressure deformation. The different kinds of gels cover the whole range of porosity between 99% and 0%, and their mechanical properties (elastic modulus, strength, toughness) are strongly dependent on the porosity but also on their structure. We follow the mechanical properties of the over the whole process alcogel–aerogel–glass. They vary by five orders of magnitude as a function of the density, and for the same relative density, the elastic modulus and strength can increase by one order of magnitude due to a change in connectivity. The influence of the sintering process compared to isostatic pressure on the mechanical properties is explained by the associated structural changes.
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An effective method for antenna design in field effect transistor terahertz detectors
Auteur(s): Zhang Bo-Wen, Yan Wei, Li Zhao-Feng, Bai Long, Cywinski Grzegorz, Yahniuk Ivan, Szkudlarek Krzesimir, Skierbiszewski Czeslaw, Przybytek Jacek, But D., Coquillat D., Knap W., Yang Fu-Hua
(Article) Publié:
Journal Of Infrared And Millimeter Waves, vol. 37 p.389-392 (2018)
Ref HAL: hal-01927813_v1
DOI: 10.11972/j.issn.1001-9014.2018.04.002
WoS: WOS:000448285000002
Exporter : BibTex | endNote
Résumé: In the implementation of field effect transistor (FET) terahertz (THz) detectors, the integration of properly designed planar antennas could effectively enhance the coupling efficiencies between the transistors and THz radiation, thus improving the responsivities of THz detectors. A method to design the planar antenna which is based on the simulation of channel electric field at the gate edge of FET is reported here. This method is suitable for the situation where the input impedances of FETs may not be conveniently obtained in the THz regime. The validity of this method in the antenna design is confirmed by the measurements of the fabricated GaN/AlGaN FET THz detectors. The maximum responsivities of the bowtie detector and the dual-dipole detector are obtained at 170.7 GHz (1568.4 V/W) and 124.3 GHz (1047.2 V/W) respectively, which are close to the simulation results of channel electric field at the gate edge of the bowtie detector and the dual-dipole detector.
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Low frequency noise in p-InAsSbP/n-InAs photodiodes
Auteur(s): Remennyi M.A., Diakonova N., Levinshtein M.E., Karandashev S, Matveev B.
Conference: XXV International Scientific and Technical Conference on Photoelectronics and Night Vision Devices (Moscow, RU, 2018-05-24)
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Field Effect Transistors Based Terahertz Detectors 25 Years History, State of the Art and Future Directions
Auteur(s): Knap W., Marczewski Jacek, Zaborowski Michal, Tomaszewski Daniel, Zagrajek Przemyslaw, But D., Sai Pavlo, Yahniuk Ivan, Diakonova N., Coquillat D., Teppe F., Cywinski Grzegorz
Conference: 2018 43RD INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ) (Nagoya, JP, 2018)
Actes de conférence: International Conference on Infrared Millimeter and Terahertz Waves, vol. p. (2018)
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Low frequency noise in p-InAsSbP/n-InAs infrared photodiodes at 300K and 77K
Auteur(s): Diakonova N., Karandashev S, Levinshtein M. E., Matveev B., Remennyi M.A.
Conference: 34th International Conference on the Physics of Semiconductors (ICPS2018) (Montpellier, FR, 2018-07-29)
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New GaN and silicon juncionless field effect transistor THz detectors
Auteur(s): Knap W.
Conférence invité: The 9th International Conference on Materials Science and Condensed Matter Physics (Chisinau, MD, 2018-09-26)
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Low frequency noise in reverse biased P-InAsSbP/n-InAs infrared photodiodes
Auteur(s): Diakonova N., Karandashev Sergey, Levinshtein Michael, Matveev Boris Anatolievich, Remennyi M.
(Article) Publié:
Semiconductor Science And Technology, vol. p. (2018)
Ref HAL: hal-01924190_v1
DOI: 10.1088/1361-6641/aaf0c6
WoS: 000452393000002
Exporter : BibTex | endNote
5 Citations
Résumé: We report the first experimental study of low-frequency noise in reverse biased P-InAsSbP/n-InAs infrared photodiodes at 300 K and 77 K. At room temperature, the current noise spectral density, SI, depends on frequency as 1/f over the entire current range and tends to the Nyquist noise when the frequency increases. At small reverse currents Irb ≤ 3.10-5 A, SI is proportional to Irb^2 ; at higher currents this dependence changes to SI~ Irb^4 . With temperature decrease down to 77 K, SI becomes proportional to Irb^0.5 , while the reverse current decreasesand the differential resistance grows by 4 orders of magnitude. The noise was also studied in the photovoltaic mode at 100 K, where SI is proportional to 2rb I . We conclude that at 100 K, the Nyquist noise is dominant and can be used for estimations of the specific detectivity of PInAsSbP/n-InAs diodes.
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