Ref HAL: hal-01908823_v1
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Excitons in nitride quantum wells (QWs) are naturally indirect due to the strong internal electric field: electron and hole within such excitons are spatially separated, leading to strong dipole moments and long radiative lifetimes. The physics of indirect excitons (IXs) has been extensively studied in GaAs-based heterostructures: they can propagate over large distances, be trapped in gate-controlled electrostatic traps, and form a cold and dense gas of interacting bosons. Compared to traditional IXs in arsenide heterostructures, IXs in GaN QWs have much larger binding energies and smaller Bohr radii. This allows exploring IX propagation up to room temperature, and over a much larger density range. The length scale of the excitonic transport is an important figure of merit of the indirect excitons. The excitonic transport was first observed at low temperature in the case of hetero-epitaxy of the GaN QWs on sapphire substrates [1]. The improvement of the sample quality through homo-epitaxy on GaN substrates allowed observing an efficient transport up to room temperature [2]. Under a focused non-resonant excitation of the quantum well, we observe a spatial decay of the exciton density (deduced from the local blue shift of the QW transition), with a length scale of 100µm at 10K and 30µm at T=300K in our most recent homo-epitaxial samples. Such long propagation distances are a pre-requisite to the development of IX-based optoelectronic devices operating on a large temperature range, and to the exploration of exciton collective states. The realization of an excitonic trap is a first step forward, and we recently investigated the exciton transport in electrostatic traps formed when a semi-transparent gate is deposited on top of the QW sample. Trapping of the excitons is observed, with a typical trap depth of 60-90 meV. The excitons can also be generated outside the trap and relax into the trap, so to spatially separate the trap from the generation spot, which is expected to be a source of heat and decoherence for the excitonic cloud. These results are promising for the investigation of trapped collective states of IXs, and their cooling into exotic phases.

Ref HAL: hal-01908795_v1
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In group-III nitride quantum wells, indirect excitons (IXs) are naturally formed because the electron-hole pair is separated along the growth (0001) axis by strong internal electric fields. These IXs therefore exhibit strong permanent dipole moments and extremely long radiative lifetimes (> 10µs). Previous extensive studies of IXs in GaAs-based, biased double quantum wells, at low temperatures, have emphasized promising properties: IXs can propagate over large distances, be controlled in-situ by light and external gate voltage, form cold and dense gases of interacting bosons, and may form collective quantum states of matter. Compared to IXs in arsenide heterostrutures, IXs in nitride QWs have much larger binding energies and smaller Bohr radii. This allows exploring IX propagation up to room temperature and over a range of exciton densities larger by two orders of magnitude. By using spatially- and time-resolved photoluminescence experiments we investigate the transport of dipolar excitons in GaN-(Al,Ga)N QWs, up to room-temperature, over distances of several tens of micrometers. Variations of conditions and comparison with models allow us to discuss the relative impacts on IX transport of important factors, such as disorder and exciton-exciton interaction.

Ref HAL: hal-01907806_v1
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Excitons in nitride quantum wells (QWs) are naturally indirect due to the strong built-in electric field: electron and hole within such excitons are spatially separated, leading to strong dipole moments and long radiative lifetimes. The physics of indirect excitons (IXs) has been extensively studied in GaAs-based heterostructures: they can propagate over large distances, be trapped in gate-controlled electrostatic traps, and form a cold and dense gas of interacting bosons. Compared to traditional IXs in arsenide heterostructures, IXs in GaN QWs have much larger binding energies and smaller Bohr radii. This allows exploring IX propagation up to room temperature, and over a much larger density range.The length scale of the excitonic transport is an important figure of merit of IXs. We have first investigated the excitonic transport in the case of hetero-epitaxy of the GaN/AlGaN QWs on sapphire substrates, at low temperature [1]. The sample quality has then been improved through homo-epitaxy on GaN substrates, and we have evidenced an efficient transport up to room temperature [2]. Under a focused non-resonant excitation of the quantum well, we observe a spatial decay of the exciton density. The transport length now reaches 100µm at 10K and 30µm at T=300K.Such long propagation distances are a pre-requisite to the development of IX-based optoelectronic devices operating on a large temperature range, and to the exploration of excitonic collective states. The realization of an excitonic trap is a first step towards this goals, and we recently investigated the exciton confinement in electrostatic traps of various shapes. The traps are realized via deposition of semi-transparent gates on top of the QW sample. Trapping of the excitons is demonstrated, with a typical trap depth of 60-90 meV. The excitons can also be generated outside the trap and relax into the trap, so to spatially separate the trap from the generation spot, which is expected to be a source of heat and decoherence for the excitonic cloud.These results are promising for the investigation of trapped collective states of IXs, and their cooling into exotic phases. Acknowledgement: This work is supported by the French National Research Agency (ANR-15-CE30-0020-02 OBELIX andANR-11-LABX-0014 GANEX).[1]F. Fedichkin et al, Phys. Rev. B 91, 205424 (2015).[2]F. Fedichkin et al, Phys. Rev. Appl. 6, 014011 (2016).

Ref HAL: hal-01905654_v1
DOI: 10.1038/s41598-018-34185-1
WoS: 000448270100017
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We investigate the optical properties of porous GaN films of different porosities, focusing on the behaviors of the excitonic features in time-integrated and time-resolved photoluminescence. A substantial enhancement of both excitonic emission intensity and recombination rate, along with insignificant intensity weakening under temperature rise, is observed in the porous GaN films. These observations are in line with (i) the local concentration of electric field at GaN nanoparticles and pores due to the depolarization effect, (ii) the efficient light extraction from the nanoparticles. Besides, the porosification enlarges the surface of the air/semiconductor interface, which further promotes the extraction efficiency and suppresses non-radiative recombination channels. Our findings open a way to increasing the emission efficiency of nanophotonic devices based on porous GaN.

Ref HAL: hal-01904849_v1
DOI: 10.1016/j.spmi.2018.05.067
WoS: 000445713700051
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3 Citations
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Excitons complexes in ZnO/(Zn, Mg)O non-polar quantum well have been studied by usingcontinuous-wave photoluminescence according to temperature and to the density of excitation.The spectrum of photoluminescence of the quantum well consists of three different lines. Theratio between the intensities of these lines depends of the temperature but also of the density ofexcitation. The lines are attributed to the free exciton, the negatively charged trion and thebiexciton. The binding energy of trion and biexciton are found to be respectively 19.5 ± 2 meVand 45 ± 5 meV.

Ref HAL: hal-02003644_v1
Ref Arxiv: 1801.03304
DOI: 10.1103/PhysRevApplied.9.064031
WoS: WOS:000435552500005
Ref. & Cit.: NASA ADS
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34 Citations
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We report on the conversion to telecom wavelength of single photons emitted by a nitrogen-vacancy (NV) defect in diamond. By means of difference frequency generation, we convert spin-selective photons at 637 nm, associated with the coherent NV zero-phonon-line, to the target wavelength of 1588 nm in the L-telecom band. The successful conversion is evidenced by time-resolved detection revealing a telecom photon lifetime identical to that of the original 637 nm photon. Furthermore, we show by second-order correlation measurements that the single-photon statistics are preserved. The overall efficiency of this one-step conversion reaches 17\% in our current setup, along with a signal-to-noise ratio of $\approx$7 despite the low probability $(< 10^{-3})$ of an incident 637 nm photon. This result shows the potential for efficient telecom photon - NV center interfaces and marks an important step towards future long-range entanglement-based quantum networks.

Commentaires: . Réf Journal: Phys. Rev. Applied 9, 064031 (2018)

Ref HAL: hal-01871322_v1
DOI: 10.1063/1.5047792
WoS: WOS:000444037000006
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We study the optical properties of MoS2 nanotubes (NTs) with walls comprising dozens of monolayers. We reveal strong peaks in micro-photoluminescence (l-PL) spectra when detecting the light polarized along the NT axis. We develop a model describing the optical properties of the nanotubes acting as optical resonators which support the quantization of whispering gallery modes inside the NT wall. The experimental observation of the resonances in l-PL allows one to use them as a contactless method of the estimation of the wall width. Our findings open a way to use such NTs as polarization-sensitive components of nanophotonic devices.