Ref HAL: hal-01767307_v1
DOI: 10.1002/pssr.201700410
WoS: WOS:000426745100008
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8 Citations
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Emerging part of condensed matter science, which deals with the systems of extreme two-dimensionality, renews the interest in natural 2D objects such as planar stacking faults (SFs) in semiconductor crystals. We report on the observation of an excitonic state localized at the 1D intersection of the SF with a high quality ZnSe quantum well (QW). The micro-photoluminescence measurements are performed in a specimen used for preceding transmission electron microscopy studies. We demonstrate that the observed narrow lines are polarized along SFs and their linewidths depend on the SFs length. For short SFs, the linewidth can be as low as 0.15 meV. Using the combination of the effective mass approach and the density functional theory calculations we show that the exciton localization is due to the intrinsic electric field inside the SF, which also leads to a spatial separation of electron and hole in the exciton. The 1D intersection of perfect natural and artificial 2D objects can serve as a promising playground for the study of subtle excitonic effects in single defects.

Ref HAL: hal-01753921_v1
DOI: 10.1364/OPTICA.5.000395
WoS: 000430601100012
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6 Citations
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In the realization of ultrasmall semiconductor lasers, cavity-QED effects are used to enhance spontaneous emission and enable the lasing threshold to be crossed with gain contributions from only a few solid-state emitters. Operation in this regime fosters correlation effects that leave their fingerprint especially in the emission dynamics of nanolasers. Using time-resolved photon-correlation spectroscopy, we show that in a quantum-dot photonic-crystal nanolaser emitting in the telecom band, second-order coherence associated with lasing is established on a different timescale than the emission itself. By combining measurements with a microscopic semiconductor laser theory, we attribute the origin to carrier-photon correlations that give rise to non-Markovian effects in the emission dynamics that are not captured by laser rate-equation theories. Our results have direct implications with respect to the modulation response, repetition rate, noise characteristics, and coherence properties of nanolasers for device applications.

Ref HAL: hal-01712338_v1
DOI: 10.1103/PhysRevMaterials.2.024001
WoS: 000424196500001
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17 Citations
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The giant birefringence of layered h-BN was demonstrated by analyzing the interference patterns in reflectance and transmittance measurements in the mid-infrared to the deep ultraviolet energy range. The refractive index for polarization perpendicular to the c axis is much higher than the refractive index for polarization parallel to the c axis, and it displays a strong increase in the ultraviolet range that is attributed to the huge excitonic effects arising from the unique electronic structure of h-BN. Thus, h-BN is shown to exhibit a giant negative birefringence that ranges from −0.7 in the visible to −2 in the deep ultraviolet close to the band gap. The electronic dielectric constants for polarization perpendicular and parallel to the c axis were determined to be ε∞⊥ = 4.95 and ε∞∥ = 2.86, respectively. The anisotropy we find in high-quality h-BN is significantly larger than proposed in previous experimental studies but in excellent agreement with ab initio calculations.

Ref HAL: hal-01700054_v1
DOI: 10.1016/j.spmi.2017.12.029
WoS: 000425199200016
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5 Citations
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The optical properties of Al0.1Ga0.9N nanostructures grown by molecular beam epitaxy on Al0.5Ga0.5N (0001) templates are investigated. By combining morphological and photo- luminescence (PL) characterizations, we have performed an in-depth analysis of the nanostructures properties as a function of the deposited amount. It is shown that: 1) the nanostructures present an asymmetrical height distribution, and a variation in their shape (i.e. both symmetric and elongated nanostructures are observed); 2) the main PL emission is found in the UV range (above 3.6 eV); and 3) a broad emission in the near UV-blue range is observed. These results allowed to attribute the main PL peak to nanostructures with properties in close agreement to the nominal Al0.1Ga0.9N concentration and deposited amount. Concerning the broad PL band at lower energy, it has been correlated to the formation of an additional type of nanostructures with larger size and lower Al compo- sition compared to the Al0.1Ga0.9N ones.

Ref HAL: hal-01700051_v1
DOI: 10.1016/j.spmi.2017.10.030
WoS: 000425566100013
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3 Citations
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In this work, we investigate the impact of the quantum confined Stark effect and of the carrier localization on the internal quantum efficiency of polarized single or multiple InxGa1-xN/GaN quantum well(s), and semi-polar (11e22) multiple InxGa1-xN/InyGa1-yN quantum well. We find that increasing the influence of the quantum confined Stark effect at constant indium content with increasing the well-width induces a reduction of the internal quantum efficiency onsets for a decreasing value of the photoexcitation density. Similar but no so dramatic trend is reported when increasing the indium content and thus when increasing the localization of carriers to localized fluctuations of the chemical composition of the alloy. In addition, a change of the electric field internal to active layers (quantified by using time-resolved photoluminescence spectroscopy) realized by growing samples along a semi-polar orientation leads to experimental observation of a substantial enhancement of the threshold of photoexcitation density at which onsets the reduction of the internal quantum efficiency. A correlation is found through several orders of magni- tude between the photoexcitation density PT for the onset of the collapse of IQE and the values of the photoluminescence radiative decay time trad. A scaling law is found in the investigated samples: PT ~ trad-n with n 1⁄4 3/2 ± 0.15 which evidences that quantum confined Stark effect is the main origin for the efficiency droop in nitride light-emitting diodes based on InxGa1-xN active layers.

Ref HAL: hal-01698220_v1
Ref Arxiv: 1708.05238
DOI: 10.1103/PhysRevB.97.035303
WoS: WOS:000419615100007
Ref. & Cit.: NASA ADS
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15 Citations
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We addressed the carrier dynamics in so-called G-centers in silicon (consisting of substitutional-interstitial carbon pairs interacting with interstitial silicons) obtained via ion implantation into a silicon-on-insulator wafer. For this point defect in silicon emitting in the telecommunication wavelength range, we unravel the recombination dynamics by time-resolved photoluminescence spectroscopy. More specifically, we performed detailed photoluminescence experiments as a function of excitation energy, incident power, irradiation fluence and temperature in order to study the impact of radiative and non-radiative recombination channels on the spectrum, yield and lifetime of G-centers. The sharp line emitting at 969 meV ($\sim$1280 nm) and the broad asymmetric sideband developing at lower energy share the same recombination dynamics as shown by time-resolved experiments performed selectively on each spectral component. This feature accounts for the common origin of the two emission bands which are unambiguously attributed to the zero-phonon line and to the corresponding phonon sideband. In the framework of the Huang-Rhys theory with non-perturbative calculations, we reach an estimation of 1.6$\pm$0.1 $\angstrom$ for the spatial extension of the electronic wave function in the G-center. The radiative recombination time measured at low temperature lies in the 6 ns-range. The estimation of both radiative and non-radiative recombination rates as a function of temperature further demonstrate a constant radiative lifetime. Finally, although G-centers are shallow levels in silicon, we find a value of the Debye-Waller factor comparable to deep levels in wide-bandgap materials. Our results point out the potential of G-centers as a solid-state light source to be integrated into opto-electronic devices within a common silicon platform.

Commentaires: . Réf Journal: Phys. Rev. B 97, 035303 (2018)

Ref HAL: hal-01697455_v1
DOI: 10.1063/1.5019629
WoS: 000424053600017
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6 Citations
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The elastic constants of high-quality, single-crystal hexagonal boron nitride (h-BN) have been measured by means of high resolution Brillouin spectroscopy using a modified reflected light microscope. The sound propagation velocity in the c-axis direction and perpendicular to the c-axis have been obtained from the Brillouin frequency shift, with a proper account taken of the vast difference between the ordinary and extraordinary refractive indices recently reported in the highly anisotropic layered h-BN crystal. The elastic constants c11 and c33 obtained from the Brillouin experiments are somewhat lower than previous determinations based on inelastic x-ray measurements and confirm the overestimation of the h-BN elastic constants by ab initio calculations based on density functional perturbation theory in the local density approximation.