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The microstructure, local indium composition and photoluminescence in green-emitting InGaN/GaN quantum wells 
Auteur(s): Chery Nicolas, Ngo T. H., Chauvat M.P., Damilano B., Courville A, Ruterana Pierre, Gil B. , de Mierry P., Grieb Tim, Mehrtens Thorsten, Krause Florian, Müller-Caspary Knut, Schowalter Marco, Rosenauer Andreas
(Article) Publié:
Journal Of Microscopy, vol. 268 p.305-313 (2018)
Texte intégral en Openaccess : 
Ref HAL: hal-01691523_v1
DOI: 10.1111/jmi.12657
WoS: 000415900300012
Exporter : BibTex | endNote
1 Citation
Résumé: In this work, we analyse the microstructure and local chemical composition of green-emitting InxGa1-xN/GaN quantum well (QW) heterostructures in correlation with their emission properties. Two samples of high structural quality grown by metalorganic vapour phase epitaxy (MOVPE) with a nominal composition of x = 0.15 and 0.18 indium are discussed. The local indium composition is quantitatively evaluated by comparing scanning transmission electron microscopy (STEM) images to simulations and the local indium concentration is extracted from intensity measurements. The calculations point out that the measured indium fluctuations may be correlated to the large width and intensity decrease of the PL emission peak.
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