This paper presents the reproducible DLI-MOCVD of MoS 2 on Si/SiO 2 from benign precursors, with very high photoluminescence on a cm-scale area.

Shunt resistance Rsh is a critical parameter for photovoltaic cells designed for low light indoor applications because it negatively affects the open circuit voltage, fill factor, and conversion efficiency. Standard CIGS cells are known to have low Rsh and are, therefore, unpromising candidates for indoor energy sources. In this paper, we extend the original work of Virtuani et al. by determining the electrical specifications of many CIGS cells with copper contents [Cu]/([Ga]+[In]) as low as 0.33 and gallium contents between 0.28 and 0.81. First, IV data are fitted by a standard single-diode electrical circuit model for each illumination, resulting in light-dependent parameters. Then, we use a procedure based on a single dataset of electrical variables, i.e., independent of light, corrected by the experimental collection function, which captures light-dependent physical mechanisms. In this way, we are able to correctly reproduce the illuminance dependence of the electrical response of the PV cell over three orders of magnitude, in particular with a fixed value of the shunt resistance. The highest Rsh is obtained with a low copper composition of 0.5, regardless of the gallium composition.

We report on the coexistence of both normal and topological insulating phases in InAs/GaSb bilayer quantum well induced by the built-in electric field tuned optically and electrically. The emergence of topological and normal insulating phases is assessed based on the evolution of the charge carrier densities, the resistivity dependence of the gap via in-plane magnetic fields and the thermal activation of carriers. For the Hall bar device tuned optically, we observe the fingerprints associated with the presence of only the topological insulating phase. For another Hall bar processed identically but with an additional top gate, the coexistence of normal and topological insulating phases is found by electrical tuning. Our finding paves the way for utilizing a new electro-optical tuning scheme to manipulate InAs/GaSb bilayer quantum wells to obtain trivial-topological insulating interfaces in the bulk rather than at the physical edge of the device.

Since the introduction of hybrid van der Waals heterostructures (h-vdWHs) for device architecture development, many vertically staked organic two-dimensional materials have been investigated in order to control transport properties. This article introduces a novel h-vdWH that achieves periodicinteraction by the development of a superlattice. We describe a complete investigation of the diphenyl-functionalized p-benzoquinonemonoimine zwitterion on highly oriented pyrolytic graphiteand monolayer graphene using high-resolution scanning tunneling microscopy images and numerical simulations. The molecular phase on both substrates exhibits a structurally identical antiparallel dipole alignment in a head-to-tail dimer configuration. Density functional theory calculations reveal that this molecularadsorption induces a local dipole at the graphene interface due to the rearrangement of the electron density distribution.