Résumé:

We present a theoretical study of the interaction between an atom characterized by a degenerate ground state and a reciprocal environment, such as a semiconductor nanoparticle, without the presence of external bias. Our analysis reveals that the combined influence of the electron's intrinsic spin magnetic moment on the environment and the chiral atomic dipolar transitions may lead to either the spontaneous breaking of time-reversal symmetry or the emergence of time-crystal-like states with remarkably long relaxation times. The different behavior is ruled by the handedness of the precession motion of the atom's spin vector, which is induced by virtual chiral-dipolar transitions. Specifically, when the relative orientation of the precession angular velocity and the electron spin vector is as in a spinning top, the system manifests time-crystal-like states. Conversely, with the opposite relative orientation, the system experiences spontaneous symmetry breaking of time reversal symmetry. Our findings introduce a mechanism for the spontaneous breaking of time-reversal symmetry in atomic systems, and unveil an exciting opportunity to engineer a nonreciprocal response at the nanoscale, exclusively driven by the quantum vacuum fluctuations.

Résumé:

We discuss graphene effects on two main fluctuational electrodynamics: Casimir effect and radiative heat transfer.

Ref HAL: hal-04617593_v1
Ref Arxiv: 2406.05921
DOI: 10.48550/arXiv.2406.05921
Ref. & Cit.: NASA ADS
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We investigate the near-field radiative heat transfer between a normally and/or laterally shifted nanoparticle and a planar fused silica slab coated with a strip graphene grating. For this study we develop and use a scattering matrix approach derived from Fourier modal method augmented with local basis functions. We find that adding a graphene sheet coating on the slab can already enhance the heat flux by about 85%. We show that by patterning the graphene sheet coating into a grating, the heat flux is further increased, and this happens thanks to the a topological transition of the plasmonic modes from circular to hyperbolic one, which allows for more energy transfer. The lateral shift affects the accessible range of high-$k$ modes and thus affects the heat flux, too. By moving the nanoparticle laterally above the graphene grating, we can obtain an optimal heat flux with strong chemical potential dependance above the strips. For a fixed graphene grating period ($D=1μ$m) and not too large normal shift (separation $d<800$nm), two different types of lateral shift effects (e.g., enhancement and inhibition) on heat transfer have been observed. As the separation $d$ is further increased, the lateral shift effect becomes less important. We show that the lateral shift effect is sensitive to the geometric factor $d/D$. Two distinct asymptotic regimes are proposed: (1) the inhibition regime ($d/D<0.85$), where the lateral shift reduces the heat transfer, and (2) the neutral regime ($d/D \geq 0.85$) where the effect of the lateral shift is negligible. In general, we can say that the geometric factor $d/D \approx 0.85$ is a critical point for the lateral shift effect. Our predictions can have relevant implications to the radiative heat transfer and energy management at the nano/micro scale.

Ref HAL: hal-04617573_v1
Ref Arxiv: 2405.16109
DOI: 10.48550/arXiv.2405.16109
Ref. & Cit.: NASA ADS
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We explore a novel approach to achieving anisotropic thermal photon tunneling, inspired by the concept of parity-time symmetry in quantum physics. Our method leverages the modulation of constitutive optical parameters, oscillating between loss and gain regimes. This modulation reveals a variety of distinct effects in thermal photon behavior and dispersion. Specifically, we identify complex tunneling modes through gain-loss engineering, which include thermal photonic defect states and Fermi-arc-like phenomena, which surpass those achievable through traditional polariton engineering. Our research also elucidates the laws governing the evolution of radiative energy in the presence of gain and loss interactions, and highlights the unexpected inefficacy of gain in enhancing thermal photon energy transport compared to systems characterized solely by loss. This study not only broadens our understanding of thermal photon tunneling but also establishes a versatile platform for manipulating photon energy transport, with potential applications in thermal management, heat science, and the development of advanced energy devices.

Ref HAL: hal-04611919_v1
DOI: 10.1063/5.0208996
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BiFeO$_3$ thin films were epitaxially grown on (110)- and (001)-oriented NdGaO$_3$ single crystal orthorhombic substrates by pulsed laser deposition. The films grown on NdGaO$_3$(110) are fully strained and show two ferroelectric variants that arrange in a stripe domain pattern with 71° domain walls, as revealed by piezoresponse force microscopy. We explored their antiferromagnetic textures using scanning NV magnetometry. Surprisingly given the large compressive strain state, the films still show a spin cycloid, resulting in a periodic zig-zag magnetic pattern due to the two ferroelastic variants. The films grown on NdGaO$_3$(001) are also fully strained, but the (001) orthorhombic substrate imposes a strongly anisotropic in-plane strain. As a consequence, the ferroelectric polarization exhibits a uniaxial in-plane component, parallel to the b-axis of the substrate. The ferroelectric domain pattern consists of 109° charged domain walls between the two selected ferroelastic variants. This anisotropic strain impacts the magnetic state of BiFeO$_3$ and leads to a simpler spin texture defined by a single propagation vector for the spin cycloid. In both cases, electric-field control of ferroelectric domains tends to favor a transition to a canted antiferromagnetic order. These results reveal that the cycloidal structure of BiFeO$_3$ can undergo large compressive strain and open further electrical means to tune the magnetic state of this room-temperature multiferroic compound.

Ref HAL: hal-04603644_v1
Ref Arxiv: 2405.14523
Ref INSPIRE: 2789653
DOI: 10.48550/arXiv.2405.14523
Ref. & Cit.: NASA ADS
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Résumé:

We study the Casimir-Lifshitz force (CLF) between a gold plate and a graphene-covered dielectric grating. Using a scattering matrix (S-matrix) approach derived from the Fourier Modal Method (FMM), we find a significant enhancement in the CLF as compared to a mere dielectric slab coated with graphene, over a wide range of temperatures. Additionally, we demonstrate that the CLF depends strongly on the chemical potential of graphene, with maximal effects observed at lower filling fractions. Finally, we analyse the Casimir force gradient between a gold sphere and a graphene-coated dielectric grating, highlighting potential avenues for experimental measurements.

Ref HAL: hal-04600016_v1
Ref Arxiv: 2404.15069
Ref INSPIRE: 2780133
Ref. & Cit.: NASA ADS
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Among the wealth of single fluorescent defects recently detected in silicon, the G center catches interest for its telecom single-photon emission that could be coupled to a metastable electron spin triplet. The G center is a unique defect where the standard Born-Oppenheimer approximation breaks down as one of its atoms can move between 6 lattice sites under optical excitation. The impact of this atomic reconfiguration on the photoluminescence properties of G centers is still largely unknown, especially in silicon-on-insulator (SOI) samples. Here, we investigate the displacement of the center-of-mass of the G center in silicon. We show that single G defects in SOI exhibit a multipolar emission and zero-phonon line fine structures with splittings up to $\sim1$ meV, both indicating a motion of the defect central atom over time. Combining polarization and spectral analysis at the single-photon level, we evidence that the reconfiguration dynamics are drastically different from the one of the unperturbed G center in bulk silicon. The SOI structure freezes the delocalization of the G defect center-of-mass and as a result, enables to isolate linearly polarized optical lines. Under above-bandgap optical excitation, the central atom of G centers in SOI behaves as if it were in a 6-slot roulette wheel, randomly alternating between localized crystal sites at each optical cycle. Comparative measurements in a bulk silicon sample and ab initio calculations highlight that strain is likely the dominant perturbation impacting the G center geometry. These results shed light on the importance of the atomic reconfiguration dynamics to understand and control the photoluminescence properties of the G center in silicon. More generally, these findings emphasize the impact of strain fluctuations inherent to SOI wafers for future quantum integrated photonics applications based on color centers in silicon.