Ref HAL: hal-00546746_v1
PMID 11690509
DOI: 10.1103/PhysRevLett.87.207401
WoS: 000172182900048
Exporter : BibTex | endNote
94 Citations
Résumé:

Microphotoluminescence measurements under ew excitation reveal the existence of a strong photoluminescence up-conversion from single InAs/GaAs self-assembled quantum dots and also from the InAs wetting layer. Excitation spectroscopy of the up-converted photoluminescence signal shows identical features from the wetting layer and the single quantum dots, i.e., a band tail coming from the deep states localized at the rough interfaces of the wetting layer quantum well. This observation of photoluminescence up-conversion demonstrates the influence on the quantum dot properties of the environment, and highlights the limitations of the artificial atom model for a semiconductor quantum dot.