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- Evidence for strain-induced lateral carrier confinement in InGaAs quantum wells by low-temperature near-field spectroscopy doi link

Auteur(s): Zeimer U., Bugge F., Gramlich S., Smirnitski V., Weyers M., Trankle G., Grenzer J., Pietsch U., Cassabois G., Emiliani V., Lienau C.

(Article) Publié: Applied Physics Letters, vol. 79 p.1611-1613 (2001)


Ref HAL: hal-00546754_v1
DOI: 10.1063/1.1402638
WoS: 000170800700009
Exporter : BibTex | endNote
9 Citations
Résumé:

A strain-induced lateral variation of the band edges of a 10-nm-thick In0.16Ga0.84As quantum well embedded in GaAs is achieved by patterning of a 100-nm-thick compressively strained In0.52Ga0.48P stressor layer. The strain modulation results in a splitting of the 10 K far-field photoluminescence (PL) spectra into two emission peaks. Spectrally resolved two-dimensional near-field PL images establish a clear spatial and spectral separation of the two far-field PL peaks, indicating a lateral carrier confinement with a confinement energy of about 10 meV. Finite-element calculations of the strain distribution are used to determine the lateral band-edge shifts and are well in agreement with the experimental findings. (C) 2001 American Institute of Physics.