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- Line narrowing in single semiconductor quantum dots: Toward the control of environment effects doi link

Auteur(s): Kammerer C., Voisin C., Cassabois G., Delalande C., Roussignol P., Klopf F., Reithmaier Jp, Forchel A., Gerard Jm

(Article) Publié: Physical Review B, vol. 66 p.041306 (2002)


Ref HAL: hal-00546650_v1
DOI: 10.1103/PhysRevB.66.041306
WoS: 000177426400013
Exporter : BibTex | endNote
84 Citations
Résumé:

We report systematic linewidth measurements on the fundamental transition of single InGaAs quantum dots. We demonstrate the quenching of the acoustic-phonon dephasing for quantum dots spectrally well separated from the band tail of the wetting layer. We achieve a line narrowing with linewidth of the order of few mueV by tailoring the influence of the electrostatic environment through a decrease of the excess energy in the nonresonant excitation process.