Ref HAL: hal-00546745_v1
DOI: 10.1063/1.1459622
WoS: 000174666600112
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12 Citations
Résumé:

Photoluminescence up-conversion under cw excitation in semiconductor quantum-dot structures is systematically studied in a sample exhibiting a crossover between two-dimensional and three-dimensional (3D) growth modes. We probe the existence of carrier up-conversion by using ultrathin quantum wells close to the quantum-dot layer. We show that the efficiency of the up-conversion is closely related to the disorder induced by the 3D-growth mode of the quantum dots. (C) 2002 American Institute of Physics.