Auteur(s): Gryglas Marta, Baj M., Jouault B., Raymond A., Chaubet C., Chenaud B., Robert Jean-louis, Faini G.
Conference: 11th International Symposium on Nanostructures - Physics and Technology (St Petersburg (RUSSIA), FR, 2003-06-23)
Actes de conférence: International Journal of Nanoscience, Vol 2, No 6, vol. 2 p.585-592 (2003)
Ref HAL: hal-00545080_v1
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Résumé:
We have used silicon impurities in an aluminum arsenide barrier to probe an adjacent two-dimensional electron gas (2DEG). A single impurity acts as a local spectrometer and scans the local density of states of the 2DEG. Magnetotransport experiments have been performed at low temperature with a magnetic field B applied along the direction of the current. Current-voltage characteristics strongly depend on B and reveal the formation of Landau levels (LLs).