Acoustic phonon-assisted resonant tunneling via single impurities Auteur(s): Gryglas M., Baj M., Chenaud B., Jouault B., Cavanna A., Faini G. (Article) Publié: Physical Review B, vol. 69 p.165302 (2004) Texte intégral en Openaccess : Ref HAL: hal-00544445_v1 DOI: 10.1103/PhysRevB.69.165302 WoS: 000221427100053 Exporter : BibTex | endNote 22 Citations Résumé: We perform the investigations of the resonant tunneling via impurities embedded in the AlAs barrier of a single GaAs/AlGaAs heterostructure. In the I(V) characteristics measured at 30 mK, the contribution of individual donors is resolved and the fingerprints of phonon assistance in the tunneling process are seen. The latter is confirmed by detailed analysis of the tunneling rates and the modeling of the resonant tunneling contribution to the current. Moreover, fluctuations of the local structure of the DOS (LDOS) and Fermi edge singularities are observed. |