Voltage tuneable terahertz emission from a ballistic nanometer InGaAs/InAlAs transistor Auteur(s): Lusakowski J., Diakonova N., Varani L., Mateos J., Parenty T., Cappy A., Popov V., Shur M.S. (Article) Publié: Journal Of Applied Physics, vol. 97 p.064307 (2005) Ref HAL: hal-00330467_v1 DOI: 10.1063/1.1861140 WoS: 000227767700074 Exporter : BibTex | endNote 128 Citations |