3D photonic crystals based on epitaxial III-V semiconductor structures for nonlinear optical interactions Auteur(s): Chong H.M.H., De La Rue R.M., O'faolain L., Krauss T.F., Belabas N., Levenson A., Raineri F., Raj R., Sagnes I., Coquillat D., Astic Magali, Delaye Philippe, Lalanne Philippe, Frey Robert, Roosen Gérald
Conférence invité: Photonic Crystal Materials and Devices III (Strasbourg, FR, 2006) Ref HAL: hal-00390417_v1 DOI: 10.1117/12.669476 WoS: 000239285500024 Exporter : BibTex | endNote Résumé: We have investigated a three-dimensionally periodic (3D) photonic crystal structure based on an epitaxial periodic GaAs/Al0.93Ga0.07As multilayer structure that was designed for non-linear optical interactions. The 3D photonic crystal structure consisted of a two-dimensionally periodic planar photonic crystal hole pattern etched into the one-dimensionally periodic multilayer structure designed for a centre wavelength of lambda = 1.6 µm. Numerical simulations on the 3D PhC structure have shown that it should exhibit slow group velocity modal features near the edge of the photonic bandgap. |