Spectroscopy of a single Si donor by the resonant tunnelling experiment Auteur(s): Baj M., Gryglas M., Jouault B., Maude D., Faini G., Gennser U., Cavanna A.
Conference: 35th International School on the Physics of Semiconducting Compounds (Jaszowiec (POLAND), FR, 2006-06-17) Ref HAL: hal-00541617_v1 Exporter : BibTex | endNote Résumé: Resonant tunnelling via single impurities placed in a single barrier was experimentally studied. The typically observed structures in the current-voltage characteristics seem to be paired. Such a pair can be interpreted as ground and excited states of an impurity, related to X-xy and X-z valleys, which is in agreement with the results obtained for big mesas. However, it is not clear why X-xy states can be seen without any phonon participation. |