An evaluation of the growth of nitrides on semipolar substrates using two indicators Auteur(s): Gil B., Bigenwald Pierre, Briot O. (Article) Publié: Physica Status Solidi - Rapid Research Letters, vol. 1 p.268-270 (2007) Texte intégral en Openaccess : Ref HAL: hal-00390129_v1 DOI: 10.1002/pssr.200701208 WoS: 000251314700022 Exporter : BibTex | endNote 8 Citations Résumé: We evaluate the properties of nitride heterostructures on semipolar substrates using two indicators: the cancellation of the Quantum Confined Stark Effect and the volume density of elastic energy stored in the strained layers of GaN-GaInN heterostructures lattice-matched to (hkl)-oriented GaN semipolar substrates. These two parameters indicate that the growth on specific orientations is a plus when compared to growth on (0001) polar substrates. We will show that, unfortunately, one cannot simultaneously minimize the stored elastic energy and cancel the Quantum Confined Stark Effect, but it is possible to significantly reduce both of them. (C) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. |