Auteur(s): Jouault B., Couturaud O., Bonifacie S., Mailly D., Chaubet C.
(Article) Publié: Physical Review B, vol. 76 p.161302 (2007)
Ref HAL: hal-00541606_v1
DOI: 10.1103/PhysRevB.76.161302
WoS: 000250620600008
Exporter : BibTex | endNote
5 Citations
Résumé:
We use the resistance fluctuations (RFs) appearing in the integer quantum Hall regime to scan the density of states of a very thin Hall bar. By applying a dc voltage on a top gate, we analyze the correlation properties of the various resistances as a function of the magnetic field and the carrier density. In the gate voltage-magnetic field plane, these RFs follow lines with slopes quantized in unit of filling factor and the slope of these RFs depends on their correlation properties.