Excitonic spin relaxation in GaN Auteur(s): Brimont C., Gallart M., Cregut O., Hoenerlage B., Gilliot P.
Conference: 10th Colloquium on Lasers and Quantum Optics (COLOQ 10) (Grenoble (FRANCE), FR, 2007-07-02) Ref HAL: hal-00545176_v1 Exporter : BibTex | endNote Résumé: By performing non-degenerate pump-probe experiments, we study the relaxation dynamics of spin-polarized A and B excitons in wurtzite epitaxial GaN. We show that the spin relaxation of the exciton as a whole is negligible with regard to the spin relaxation of the individual carriers. We determined T-e = 15 ps for the electron in the conduction band, T-hh = 5 ps, and T-lh = 1.5 ps for the heavy hole (HH) and for the light hole (LH), respectively. The quite long HH relaxation time can be related to the band structure in which the degeneracy between different spin-valence bands is lifted. |