Antisymmetric magnetoresistance anomalies and magnetic domain structure in GaMnAs/InGaAs layers Auteur(s): Desrat W., Kamara S., Terki F., Charar S., Sadowski J., Maude D. K. (Article) Publié: Semiconductor Science And Technology, vol. 24 p.065011 (2009) Texte intégral en Openaccess : Ref HAL: hal-00539810_v1 DOI: 10.1088/0268-1242/24/6/065011 WoS: 000266287000019 Exporter : BibTex | endNote 14 Citations Résumé: Antisymmetric magneto-resistance anomalies generated by a reversal of the magnetization are studied in a number of GaMnAs/InGaAs layers with out-of-plane (easy axis) magnetization. The anomalies occur independent of the magnetic field orientation. This shows, that once a magnetic domain with reversed magnetization is nucleated, simply the presence of the domain wall between the longitudinal contacts is sufficient to give rise to the anomaly. Very different shapes for magneto-resistance anomaly can be observed experimentally depending upon the sample. They reflect the various magnetic domain structures present inside the layers during the magnetization reversal process. |