Auteur(s): Jouault B., Gryglas Marta, Baj M., Cavanna Antonella, Gennser Ulf, Faini Giancarlo, Maude Duncan
(Article) Publié: Physical Review B, vol. 79 p.041307(R) (2009)
Ref HAL: hal-00439962_v1
DOI: 10.1103/PhysRevB.79.041307
WoS: 000262978400009
Exporter : BibTex | endNote
10 Citations
Résumé:
The Zeeman splittings of a Si shallow donor in AlAs and of a two-dimensional electron gas (2DEG) in GaAs are evidenced by resonant tunneling spectroscopy in submicrometer GaAs/AlAs/GaAs junctions. In magnetic field, the donor acts as a spin-sensitive probe of the spin-polarized density of states in the emitter. In the current-voltage characteristic the two splittings are resolved, which allows us to estimate the Landé g factors for the impurity gI=+1.96±0.16 and for the 2DEG. Because of spin conservation in the tunneling between the 2DEG and the donor, the relative sign of the two g factors can be determined.